Class information for:
Level 1: POROUS INP//LOW DIMENS SEMICOND STRUCT//POROUS SIC

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
14980 669 19.3 70%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
599 13375 POROUS SILICON//SILICON NANOCRYSTALS//SI NANOCRYSTALS

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 POROUS INP Author keyword 23 86% 2% 12
2 LOW DIMENS SEMICOND STRUCT Address 13 39% 4% 27
3 POROUS SIC Author keyword 12 39% 4% 24
4 POROUS GAN Author keyword 11 49% 3% 17
5 POROUS INGAN Author keyword 11 100% 1% 6
6 MAT STUDY TESTING Address 7 28% 3% 21
7 POROUS SILICON CARBIDE Author keyword 5 42% 1% 10
8 POROUS GAAS Author keyword 5 37% 1% 10
9 LC DMX Address 4 75% 0% 3
10 NANOPOROUS GAN Author keyword 3 60% 0% 3

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 POROUS INP 23 86% 2% 12 Search POROUS+INP Search POROUS+INP
2 POROUS SIC 12 39% 4% 24 Search POROUS+SIC Search POROUS+SIC
3 POROUS GAN 11 49% 3% 17 Search POROUS+GAN Search POROUS+GAN
4 POROUS INGAN 11 100% 1% 6 Search POROUS+INGAN Search POROUS+INGAN
5 POROUS SILICON CARBIDE 5 42% 1% 10 Search POROUS+SILICON+CARBIDE Search POROUS+SILICON+CARBIDE
6 POROUS GAAS 5 37% 1% 10 Search POROUS+GAAS Search POROUS+GAAS
7 NANOPOROUS GAN 3 60% 0% 3 Search NANOPOROUS+GAN Search NANOPOROUS+GAN
8 POROUS GALLIUM NITRIDE 2 67% 0% 2 Search POROUS+GALLIUM+NITRIDE Search POROUS+GALLIUM+NITRIDE
9 PA MBE 2 33% 1% 5 Search PA+MBE Search PA+MBE
10 ANODIC ETCHING 2 22% 1% 8 Search ANODIC+ETCHING Search ANODIC+ETCHING

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 POROUS GAAS 34 68% 4% 30
2 POROUS GAP 13 62% 2% 13
3 POROUS SILICON CARBIDE 9 36% 3% 21
4 POROUS GAN 9 48% 2% 14
5 N INP 3 15% 3% 20
6 POROUS INP 3 60% 0% 3
7 ELECTROCHEMICAL PORE FORMATION 2 67% 0% 2
8 GROWN ANODIC OXIDE 2 67% 0% 2
9 VARYING POROSITY 1 100% 0% 2
10 III V CRYSTALS 1 40% 0% 2

Journals

Reviews



Title Publ. year Cit. Active references % act. ref.
to same field
Pores in III-V semiconductors 2003 138 61 51%
Electrochemical pore formation onto semiconductor surfaces 2008 15 160 35%
Chemical etching investigation of polycrystalline p-type 6H-SiC in HF/Na2O2 solutions 2009 3 18 67%
Raman scattering of nanoporous semiconductors 2007 31 73 23%
Dewetting of copper nanolayers on silica in oxygen: towards preparation of copper meso/nanowires by self-organization 2009 1 112 3%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 LOW DIMENS SEMICOND STRUCT 13 39% 4.0% 27
2 MAT STUDY TESTING 7 28% 3.1% 21
3 LC DMX 4 75% 0.4% 3
4 NANOOPTELECT TECHNOL 1 100% 0.3% 2
5 LKO 1 13% 1.3% 9
6 CHEM PROC SCI 1 33% 0.3% 2
7 AMPM 1 50% 0.1% 1
8 CHEM MECH 1 50% 0.1% 1
9 CHIM PROVENCEUMR CNRS 6264 1 50% 0.1% 1
10 GDOPT 1 50% 0.1% 1

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000229213 INTER E ENGN GRP//CHAIR GEN MAT SCI//ALCOY ENGN
2 0.0000128180 HIGH RESOLUTION X RAY MICROSCOPY//INNER SHELL ELECTRON EXCITATION//INTENSE X RAYS
3 0.0000108210 SOCIOTECHNO SCI TECHNOL//N GAN//GALLIUM HYDROXIDE
4 0.0000103705 NANOMETER SIZED SCHOTTKY CONTACT//METAL DOT ARRAY//NANO DIODE
5 0.0000102224 POROUS SILICON//POROUS SI//STAIN ETCHING
6 0.0000071884 SIC NANOWIRES//SILICON CARBIDE NANOWIRES//SIC NANORODS
7 0.0000056559 3C SIC//FG NANOTECHNOL//HOLLOW VOID
8 0.0000055567 POROUS SILICON//POROUS SILICON NANOPARTICLES//XINJIANG BIOL OURCES GENE ENGN
9 0.0000054210 SOLUTION LIQUID SOLID GROWTH//GAP NANOCRYSTALS//PARTICULATE THIN FILM
10 0.0000051970 MICROPIPE//SUBLIMATION GROWTH//MICROPIPES