Class information for:
Level 1: NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI//NEGATIVE BIAS TEMPERATURE INSTABILITY//CHRISTIAN DOPPLER TCAD

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
14953 671 23.6 54%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI Author keyword 118 57% 21% 139
2 NEGATIVE BIAS TEMPERATURE INSTABILITY Author keyword 24 48% 6% 38
3 CHRISTIAN DOPPLER TCAD Address 13 80% 1% 8
4 BIAS TEMPERATURE INSTABILITY Author keyword 12 37% 4% 26
5 NBTI Author keyword 11 15% 10% 68
6 BIAS TEMPERATURE INSTABILITY BTI Author keyword 11 40% 3% 21
7 POSITIVE BIAS TEMPERATURE INSTABILITY PBTI Author keyword 10 39% 3% 21
8 REACTION DIFFUSION R D MODEL Author keyword 10 63% 1% 10
9 PLASMA OXYNITRIDE Author keyword 6 100% 1% 4
10 FIELD ACCELERATION Author keyword 4 67% 1% 4

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 NEGATIVE BIAS TEMPERATURE INSTABILITY NBTI 118 57% 21% 139 Search NEGATIVE+BIAS+TEMPERATURE+INSTABILITY+NBTI Search NEGATIVE+BIAS+TEMPERATURE+INSTABILITY+NBTI
2 NEGATIVE BIAS TEMPERATURE INSTABILITY 24 48% 6% 38 Search NEGATIVE+BIAS+TEMPERATURE+INSTABILITY Search NEGATIVE+BIAS+TEMPERATURE+INSTABILITY
3 BIAS TEMPERATURE INSTABILITY 12 37% 4% 26 Search BIAS+TEMPERATURE+INSTABILITY Search BIAS+TEMPERATURE+INSTABILITY
4 NBTI 11 15% 10% 68 Search NBTI Search NBTI
5 BIAS TEMPERATURE INSTABILITY BTI 11 40% 3% 21 Search BIAS+TEMPERATURE+INSTABILITY+BTI Search BIAS+TEMPERATURE+INSTABILITY+BTI
6 POSITIVE BIAS TEMPERATURE INSTABILITY PBTI 10 39% 3% 21 Search POSITIVE+BIAS+TEMPERATURE+INSTABILITY+PBTI Search POSITIVE+BIAS+TEMPERATURE+INSTABILITY+PBTI
7 REACTION DIFFUSION R D MODEL 10 63% 1% 10 Search REACTION+DIFFUSION+R+D+MODEL Search REACTION+DIFFUSION+R+D+MODEL
8 PLASMA OXYNITRIDE 6 100% 1% 4 Search PLASMA+OXYNITRIDE Search PLASMA+OXYNITRIDE
9 FIELD ACCELERATION 4 67% 1% 4 Search FIELD+ACCELERATION Search FIELD+ACCELERATION
10 HOLE TRAPPING 4 22% 3% 17 Search HOLE+TRAPPING Search HOLE+TRAPPING

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 BIAS TEMPERATURE INSTABILITY 65 37% 21% 139
2 NBTI 45 36% 15% 99
3 NBTI DEGRADATION 42 49% 9% 63
4 INTERFACE TRAP GENERATION 11 33% 4% 27
5 TEMPERATURE INSTABILITY 10 57% 2% 12
6 I DLIN TECHNIQUE 9 59% 1% 10
7 P MOSFETS 9 20% 6% 38
8 INTERFACE TRAP 8 40% 2% 16
9 SILICON DIOXIDES 7 41% 2% 14
10 SION GATE DIELECTRICS 6 71% 1% 5

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
The negative bias temperature instability in MOS devices: A review 2006 158 49 63%
Review and reexamination of reliability effects related to NBTI-induced statistical variations 2007 61 8 50%
Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing 2003 450 53 28%
Unification of contemporary negative bias temperature instability models for p-MOSFET energy degradation 2013 1 23 61%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 CHRISTIAN DOPPLER TCAD 13 80% 1.2% 8
2 RELIABIL GRP 2 44% 0.6% 4
3 CHRISTIAN DOPPLER TCAD MICROELECT 2 36% 0.6% 4
4 DEVICE RELIABIL ELECT CHARACTERIZAT GRP 1 100% 0.3% 2
5 TECHNOL RELIABIL DEV 1 50% 0.3% 2
6 CENT RELIABIL METHODOL 1 33% 0.3% 2
7 ANALYSIS TECHNOL DEV 1 50% 0.1% 1
8 CMOS DESIGN BACKPLANE GRP 1 50% 0.1% 1
9 CMOS RELIABIL GRP 1 50% 0.1% 1
10 CRD S 1 50% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000223588 SID4//DEUTERIUM D ANNEALING//TRAP CREATION
2 0.0000190715 DEVICE MODELLING GRP//RANDOM DOPANT//DEVICE MODELING GRP
3 0.0000181850 HOT CARRIER//CHANNEL INITIATED SECONDARY ELECTRON CHISEL//HOT CARRIER DEGRADATION
4 0.0000148830 OXIDE TRAPPED CHARGE//ELDRS//TOTAL IONIZING DOSE
5 0.0000145524 STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD
6 0.0000140512 SRAM//PROCESS VARIATION//POWER GATING
7 0.0000098999 BORON PENETRATION//REMOTE PLASMA NITRIDATION RPN//SI NITRIDE
8 0.0000077564 HFO2//HIGH K//METAL GATE
9 0.0000059349 SHORT CIRCUIT POWER DISSIPATION//TRANSISTOR SIZING//GATE SIZING
10 0.0000051716 SONOS//CHARGE TRAPPING LAYER//FLASH MEMORY