Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
14951 | 671 | 24.3 | 68% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
666 | 12577 | SCANNING TUNNELING MICROSCOPY//ATOM WI LAYERS//VICINAL SINGLE CRYSTAL SURFACES |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | TRANSLATIONAL KINETIC ENERGY | Author keyword | 6 | 80% | 1% | 4 |
2 | POINT DEFECT GENERATION | Author keyword | 4 | 75% | 0% | 3 |
3 | OXYGEN MOLECULAR BEAM | Author keyword | 3 | 100% | 0% | 3 |
4 | SI OXIDATION | Author keyword | 3 | 42% | 1% | 5 |
5 | SI THERMAL OXIDATION | Author keyword | 2 | 67% | 0% | 2 |
6 | SI001 OXIDATION | Author keyword | 2 | 67% | 0% | 2 |
7 | SI0012X1 SURFACE | Author keyword | 2 | 67% | 0% | 2 |
8 | SCANNING REFLECTION ELECTRON MICROSCOPY | Author keyword | 2 | 50% | 0% | 3 |
9 | O 2 GAS | Author keyword | 2 | 43% | 0% | 3 |
10 | BACKBOND | Author keyword | 1 | 100% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | TRANSLATIONAL KINETIC ENERGY | 6 | 80% | 1% | 4 | Search TRANSLATIONAL+KINETIC+ENERGY | Search TRANSLATIONAL+KINETIC+ENERGY |
2 | POINT DEFECT GENERATION | 4 | 75% | 0% | 3 | Search POINT+DEFECT+GENERATION | Search POINT+DEFECT+GENERATION |
3 | OXYGEN MOLECULAR BEAM | 3 | 100% | 0% | 3 | Search OXYGEN+MOLECULAR+BEAM | Search OXYGEN+MOLECULAR+BEAM |
4 | SI OXIDATION | 3 | 42% | 1% | 5 | Search SI+OXIDATION | Search SI+OXIDATION |
5 | SI THERMAL OXIDATION | 2 | 67% | 0% | 2 | Search SI+THERMAL+OXIDATION | Search SI+THERMAL+OXIDATION |
6 | SI001 OXIDATION | 2 | 67% | 0% | 2 | Search SI001+OXIDATION | Search SI001+OXIDATION |
7 | SI0012X1 SURFACE | 2 | 67% | 0% | 2 | Search SI0012X1+SURFACE | Search SI0012X1+SURFACE |
8 | SCANNING REFLECTION ELECTRON MICROSCOPY | 2 | 50% | 0% | 3 | Search SCANNING+REFLECTION+ELECTRON+MICROSCOPY | Search SCANNING+REFLECTION+ELECTRON+MICROSCOPY |
9 | O 2 GAS | 2 | 43% | 0% | 3 | Search O+2+GAS | Search O+2+GAS |
10 | BACKBOND | 1 | 100% | 0% | 2 | Search BACKBOND | Search BACKBOND |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SI EJECTION | 25 | 75% | 3% | 18 |
2 | MOLECULAR PRECURSOR | 23 | 43% | 6% | 41 |
3 | CHEMISTRY END STATION | 15 | 67% | 2% | 14 |
4 | STAGE OXIDATION PRODUCTS | 15 | 77% | 1% | 10 |
5 | SUCCESSIVE OXIDATION STAGES | 15 | 88% | 1% | 7 |
6 | ULTRATHIN OXIDE | 13 | 48% | 3% | 20 |
7 | BY LAYER OXIDATION | 7 | 38% | 2% | 15 |
8 | BL23SU | 7 | 57% | 1% | 8 |
9 | SIO2 SI INTERFACE | 4 | 11% | 6% | 37 |
10 | X RAY BEAMLINE | 4 | 31% | 2% | 12 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
THE INTERACTION OF MOLECULAR AND ATOMIC OXYGEN WITH SI(100) AND SI(111) | 1993 | 225 | 61 | 62% |
Nanolithography on SiO2/Si with a scanning tunnelling microscope | 2003 | 15 | 29 | 55% |
Application of integrated computer simulation approach to solid surfaces and interfaces | 1998 | 0 | 101 | 9% |
Epitaxial and endotaxial semiconductor quantum dots: A brief review on atomic ordering and the void-mediated formation mechanism | 2005 | 1 | 24 | 4% |
CHEMICAL INFORMATIONS IN AUGER-ELECTRON SPECTROSCOPY | 1985 | 12 | 34 | 18% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | COMPUTAT VISUALIZAT VIRTUAL REAL SICHUA | 1 | 50% | 0.1% | 1 |
2 | ENGN BUILT ENGN | 1 | 50% | 0.1% | 1 |
3 | KAWAKATSU | 1 | 50% | 0.1% | 1 |
4 | MINERAL CRYSTALLOG PARIS | 1 | 50% | 0.1% | 1 |
5 | PHYS INTER ES COUCHES MINES | 1 | 50% | 0.1% | 1 |
6 | SOLID STATE PHYS MESA | 1 | 50% | 0.1% | 1 |
7 | SYNCHOROTRON RADIAT | 1 | 50% | 0.1% | 1 |
8 | UP A 7014 CNRS | 1 | 50% | 0.1% | 1 |
9 | ENGN MOL CHEM ENGN AOBA KU | 0 | 33% | 0.1% | 1 |
10 | CNRS PHOTOPHYS MOLEC | 0 | 15% | 0.3% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000257876 | INTERFACIAL SILICON EMISSION//SILICON OXIDATION//LOW TEMPERATURE SILICON OXIDATION |
2 | 0.0000186352 | HYDROGEN TERMINATION//SHIZUOKA TORY//LAYER BY LAYER OXIDATION |
3 | 0.0000176727 | HIGH INDEX SINGLE CRYSTAL SURFACES//SI110//SI113 |
4 | 0.0000152444 | ORGANIC SEMICONDUCTOR INTERFACE//SI100//GE100 |
5 | 0.0000131544 | GE001//C4 X 2//C4X2 |
6 | 0.0000124971 | CEA SERV RECH SUR ES IRRADIAT MAT//CHIM ORGAN THEORIQUE//DISPLAY DEVICE CO |
7 | 0.0000111900 | NANOPYRAMID ARRAY//DOPANT ION IMPLANTATION//FIS SUPERFICIES INTER ES |
8 | 0.0000091153 | SYNCHROTRON RADIATION STIMULATED ETCHING//SYNCHROTRON RADIATION EXCITED GROWTH//VACUUM UV PHOTOSCI |
9 | 0.0000074716 | DAS STRUCTURE//SN GE111//SI111 7 X 7 |
10 | 0.0000071683 | PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION |