Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1489 | 2541 | 23.6 | 70% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1317 | 8022 | ELECT DEVICES MAT TECHNOL//PLASMA ETCHING//SIO2 ETCHING |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | ELECT DEVICES MAT TECHNOL | Address | 140 | 94% | 2% | 49 |
2 | SIO2 ETCHING | Author keyword | 33 | 67% | 1% | 29 |
3 | PLASMA ETCHING | Author keyword | 19 | 15% | 5% | 115 |
4 | CF2 RADICAL | Author keyword | 18 | 89% | 0% | 8 |
5 | RIE LAG | Author keyword | 18 | 55% | 1% | 22 |
6 | CF2 | Author keyword | 17 | 68% | 1% | 15 |
7 | ETCH MECHANISM | Author keyword | 17 | 72% | 1% | 13 |
8 | IRLAS | Author keyword | 17 | 100% | 0% | 8 |
9 | ULTRAHIGH FREQUENCY PLASMA | Author keyword | 17 | 100% | 0% | 8 |
10 | ELECTRON SHADING | Author keyword | 15 | 82% | 0% | 9 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SIO2 ETCHING | 33 | 67% | 1% | 29 | Search SIO2+ETCHING | Search SIO2+ETCHING |
2 | PLASMA ETCHING | 19 | 15% | 5% | 115 | Search PLASMA+ETCHING | Search PLASMA+ETCHING |
3 | CF2 RADICAL | 18 | 89% | 0% | 8 | Search CF2+RADICAL | Search CF2+RADICAL |
4 | RIE LAG | 18 | 55% | 1% | 22 | Search RIE+LAG | Search RIE+LAG |
5 | CF2 | 17 | 68% | 1% | 15 | Search CF2 | Search CF2 |
6 | ETCH MECHANISM | 17 | 72% | 1% | 13 | Search ETCH+MECHANISM | Search ETCH+MECHANISM |
7 | IRLAS | 17 | 100% | 0% | 8 | Search IRLAS | Search IRLAS |
8 | ULTRAHIGH FREQUENCY PLASMA | 17 | 100% | 0% | 8 | Search ULTRAHIGH+FREQUENCY+PLASMA | Search ULTRAHIGH+FREQUENCY+PLASMA |
9 | ELECTRON SHADING | 15 | 82% | 0% | 9 | Search ELECTRON+SHADING | Search ELECTRON+SHADING |
10 | MICROSCOPIC UNIFORMITY | 14 | 100% | 0% | 7 | Search MICROSCOPIC+UNIFORMITY | Search MICROSCOPIC+UNIFORMITY |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | HIGH DENSITY PLASMAS | 160 | 66% | 6% | 150 |
2 | FLUOROCARBON PLASMAS | 75 | 58% | 3% | 86 |
3 | HBR CL 2 O 2 | 73 | 96% | 1% | 23 |
4 | CHAMBER WALLS | 65 | 90% | 1% | 28 |
5 | CYCLOTRON RESONANCE PLASMA | 56 | 28% | 7% | 167 |
6 | RADICAL DENSITIES | 56 | 85% | 1% | 29 |
7 | SIDEWALL PASSIVATION | 51 | 91% | 1% | 21 |
8 | CL 2 AR PLASMAS | 48 | 91% | 1% | 20 |
9 | SURFACE KINETICS | 47 | 62% | 2% | 49 |
10 | CHF3 | 45 | 42% | 3% | 84 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
High aspect ratio silicon etch: A review | 2010 | 123 | 77 | 70% |
Plasma cryogenic etching of silicon: from the early days to today's advanced technologies | 2014 | 15 | 97 | 67% |
Plasma etching: Yesterday, today, and tomorrow | 2013 | 53 | 262 | 43% |
Pulsed high-density plasmas for advanced dry etching processes | 2012 | 35 | 105 | 79% |
Black silicon method X: a review on high speed and selective plasma etching of silicon with profile control: an in-depth comparison between Bosch and cryostat DRIE processes as a roadmap to next generation equipment | 2009 | 71 | 227 | 52% |
Developments of plasma etching technology for fabricating semiconductor devices | 2008 | 96 | 86 | 40% |
Pulsed plasma etching for semiconductor manufacturing | 2014 | 7 | 116 | 46% |
Critical review: Plasma-surface reactions and the spinning wall method | 2011 | 13 | 81 | 74% |
Review of profile and roughening simulation in microelectronics plasma etching | 2009 | 25 | 100 | 56% |
SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS | 2009 | 23 | 87 | 49% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ELECT DEVICES MAT TECHNOL | 140 | 94% | 1.9% | 49 |
2 | TECHNOL MICROELECT | 13 | 25% | 1.7% | 43 |
3 | LSI BASIC | 11 | 69% | 0.4% | 9 |
4 | MAT MACHINERY GRP | 8 | 100% | 0.2% | 5 |
5 | ENVIRONM BENIGN ETCHING TECHNOL | 6 | 80% | 0.2% | 4 |
6 | PLASMA SUR E INTERACT | 6 | 58% | 0.3% | 7 |
7 | SI SYST S | 6 | 100% | 0.2% | 4 |
8 | MICROELECT DEVICES MAT TECHNOL | 4 | 39% | 0.4% | 9 |
9 | DRAM MFG | 4 | 75% | 0.1% | 3 |
10 | IMN PLASMAS COUCHES MINCES | 4 | 75% | 0.1% | 3 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000261428 | CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION |
2 | 0.0000208291 | ATOMIC LAYER ETCHING//GATE CHARGING//NEUTRAL BEAM ETCHING |
3 | 0.0000186170 | ELECTROLYTIC COPPER ADDITION//BCL3 PLASMA//FIS CHIM SUPERFICI INTER E |
4 | 0.0000156735 | MEMS PATTERNING//ETCHING DAMAGE//RUOX PT |
5 | 0.0000155247 | LOW INDUCTANCE ANTENNA//LOW DAMAGE PROCESS//INDUCTIVELY COUPLED PLASMA |
6 | 0.0000142147 | LADDER SHAPED ELECTRODE//PLASMA ATOM PHYS//VHF PLASMA |
7 | 0.0000107767 | VACUUM TECHNOL//ACTIVE PLASMA RESONANCE SPECTROSCOPY//CUTOFF PROBE |
8 | 0.0000104583 | MAGNETIC NEUTRAL LINE//NEUTRAL LOOP DISCHARGE//TCO LESS DSCS |
9 | 0.0000101846 | INDUCTIVELY COUPLED PLASMA REACTIVE ION ETCHING//TI HARD MASK//CL 2 BASED PLASMA |
10 | 0.0000099411 | FLUOROCARBON FILMS//FLUORINATED AMORPHOUS CARBON//A C F |