Class information for:
Level 1: OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
1483 2543 20.4 51%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
372 16511 SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 OXYGEN PRECIPITATION Author keyword 82 66% 3% 75
2 GROWN IN DEFECT Author keyword 72 93% 1% 27
3 CZOCHRALSKI SILICON Author keyword 61 56% 3% 75
4 OSF RING Author keyword 33 100% 1% 13
5 OXYGEN PRECIPITATE Author keyword 32 65% 1% 30
6 GROWN IN DEFECTS Author keyword 27 70% 1% 23
7 OXYGEN PRECIPITATES Author keyword 26 54% 1% 34
8 THERMAL DONORS Author keyword 24 45% 2% 40
9 CRYSTAL ORIGINATED PARTICLE Author keyword 23 100% 0% 10
10 OXIDE PRECIPITATE Author keyword 19 76% 1% 13

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 OXYGEN PRECIPITATION 82 66% 3% 75 Search OXYGEN+PRECIPITATION Search OXYGEN+PRECIPITATION
2 GROWN IN DEFECT 72 93% 1% 27 Search GROWN+IN+DEFECT Search GROWN+IN+DEFECT
3 CZOCHRALSKI SILICON 61 56% 3% 75 Search CZOCHRALSKI+SILICON Search CZOCHRALSKI+SILICON
4 OSF RING 33 100% 1% 13 Search OSF+RING Search OSF+RING
5 OXYGEN PRECIPITATE 32 65% 1% 30 Search OXYGEN+PRECIPITATE Search OXYGEN+PRECIPITATE
6 GROWN IN DEFECTS 27 70% 1% 23 Search GROWN+IN+DEFECTS Search GROWN+IN+DEFECTS
7 OXYGEN PRECIPITATES 26 54% 1% 34 Search OXYGEN+PRECIPITATES Search OXYGEN+PRECIPITATES
8 THERMAL DONORS 24 45% 2% 40 Search THERMAL+DONORS Search THERMAL+DONORS
9 CRYSTAL ORIGINATED PARTICLE 23 100% 0% 10 Search CRYSTAL+ORIGINATED+PARTICLE Search CRYSTAL+ORIGINATED+PARTICLE
10 OXIDE PRECIPITATE 19 76% 1% 13 Search OXIDE+PRECIPITATE Search OXIDE+PRECIPITATE

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 CZOCHRALSKI SILICON 269 57% 13% 318
2 OXYGEN PRECIPITATION 200 61% 8% 210
3 SWIRL DEFECTS 77 69% 3% 66
4 MICRODEFECT FORMATION 65 93% 1% 25
5 CZOCHRALSKI GROWN SILICON 63 49% 4% 93
6 THERMALLY INDUCED MICRODEFECTS 42 83% 1% 24
7 AXIAL TEMPERATURE GRADIENT 42 78% 1% 28
8 IN DEFECTS 41 81% 1% 25
9 GROWN IN DEFECTS 40 82% 1% 23
10 THERMAL DONOR FORMATION 38 50% 2% 56

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
OXYGEN PRECIPITATION IN SILICON 1995 348 194 82%
Oxygen diffusion and precipitation in Czochralski silicon 2000 100 84 74%
Impurity engineering of Czochralski silicon 2013 7 197 79%
A selective review of the quantification of defect dynamics in growing Czochralski silicon crystals 2005 16 53 81%
Vacancy-oxygen defects in silicon: the impact of isovalent doping 2014 2 151 40%
Present status and prospect of Si wafers for ultra large scale integration 2004 17 50 50%
Defect engineering of Czochralski single-crystal silicon 2000 64 93 47%
IR studies of oxygen-vacancy related defects in irradiated silicon 1999 14 42 71%
Physical model of paths of microdefects nucleation in dislocation-free single crystals float-zone silicon 2002 2 54 74%
An electronics division retrospective 1952-2002 and future opportunities in the twenty-first century 2002 8 119 40%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SITIX 13 71% 0.4% 10
2 SEH ISOBE RD 11 67% 0.4% 10
3 RIAST 7 38% 0.6% 15
4 SIMULAT PART 7 67% 0.2% 6
5 QUANTITAT SILICON 6 100% 0.2% 4
6 SILICON MFG ENGN SUB 6 100% 0.2% 4
7 LTAM 4 75% 0.1% 3
8 SEMICOND MAT ENGN 4 75% 0.1% 3
9 INTEGRATED PROD BUSINESS UNIT 4 56% 0.2% 5
10 STATE SILICON MAT SCI 3 22% 0.6% 14

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000123619 GETTERING//GETTERING EFFICIENCY//SI AU
2 0.0000106305 CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD
3 0.0000097562 ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS
4 0.0000090096 FARADAY COLLECTOR//MAGNETIC ANALYZER//IMAGE WIDTH
5 0.0000087285 LIFETIME CONTROL//SEMI INSULATING MATERIALS//POWER DIODES
6 0.0000084510 MAGNETIC FIELD ASSISTED CZOCHRALSKI METHOD//CZOCHRALSKI METHOD//CZOCHRALSKI CRYSTAL GROWTH
7 0.0000077257 IRRADIATED P N JUNCTION LEAKAGE//JUNCTION SHAPE//P N JUNCTION LEAKAGE
8 0.0000074161 SIMOX//BURIED OXIDE LAYER//CONTACTLESS I V METHOD
9 0.0000071660 BANDLIKE STATES//DISLOCATION ENGINEERED//RECOMBINATION STRENGTH
10 0.0000069025 HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN IN SI