Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
14795 | 680 | 17.4 | 45% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
2557 | 3267 | INTERFACIAL SILICON EMISSION//SILICON OXIDATION//GENIE URBAIN ENVIRONM |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | BOROPHOSPHOSILICATE GLASS BPSG | Author keyword | 2 | 67% | 0% | 2 |
2 | ATMOSPHERIC PRESSURE CVD | Author keyword | 2 | 27% | 1% | 6 |
3 | BPSG | Author keyword | 2 | 22% | 1% | 7 |
4 | FLOW SHAPED STEP COVERAGE | Author keyword | 1 | 100% | 0% | 2 |
5 | FLOWING LIKE PROFILE | Author keyword | 1 | 100% | 0% | 2 |
6 | LPCVD SILICON NITRIDE | Author keyword | 1 | 50% | 0% | 2 |
7 | PLASMA DEPOSITED OXIDES | Author keyword | 1 | 100% | 0% | 2 |
8 | QAS | Address | 1 | 100% | 0% | 2 |
9 | SINCO4 | Author keyword | 1 | 100% | 0% | 2 |
10 | TEOS O 3 | Author keyword | 1 | 100% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | BOROPHOSPHOSILICATE GLASS BPSG | 2 | 67% | 0% | 2 | Search BOROPHOSPHOSILICATE+GLASS+BPSG | Search BOROPHOSPHOSILICATE+GLASS+BPSG |
2 | ATMOSPHERIC PRESSURE CVD | 2 | 27% | 1% | 6 | Search ATMOSPHERIC+PRESSURE+CVD | Search ATMOSPHERIC+PRESSURE+CVD |
3 | BPSG | 2 | 22% | 1% | 7 | Search BPSG | Search BPSG |
4 | FLOW SHAPED STEP COVERAGE | 1 | 100% | 0% | 2 | Search FLOW+SHAPED+STEP+COVERAGE | Search FLOW+SHAPED+STEP+COVERAGE |
5 | FLOWING LIKE PROFILE | 1 | 100% | 0% | 2 | Search FLOWING+LIKE+PROFILE | Search FLOWING+LIKE+PROFILE |
6 | LPCVD SILICON NITRIDE | 1 | 50% | 0% | 2 | Search LPCVD+SILICON+NITRIDE | Search LPCVD+SILICON+NITRIDE |
7 | PLASMA DEPOSITED OXIDES | 1 | 100% | 0% | 2 | Search PLASMA+DEPOSITED+OXIDES | Search PLASMA+DEPOSITED+OXIDES |
8 | SINCO4 | 1 | 100% | 0% | 2 | Search SINCO4 | Search SINCO4 |
9 | TEOS O 3 | 1 | 100% | 0% | 2 | Search TEOS+O+3 | Search TEOS+O+3 |
10 | TETRAETHYLORTHOSILICATE | 1 | 11% | 1% | 7 | Search TETRAETHYLORTHOSILICATE | Search TETRAETHYLORTHOSILICATE |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | LOW TEMPERATURE REFLOW | 27 | 92% | 2% | 11 |
2 | BOROPHOSPHOSILICATE GLASS | 25 | 66% | 3% | 23 |
3 | TEOS | 13 | 21% | 8% | 55 |
4 | PHOSPHOSILICATE GLASS | 13 | 62% | 2% | 13 |
5 | BOROPHOSPHOSILICATE GLASS FILMS | 10 | 73% | 1% | 8 |
6 | TETRAETHYLORTHOSILICATE | 10 | 23% | 5% | 37 |
7 | FLOW POINTS | 6 | 80% | 1% | 4 |
8 | BASE MATERIALS | 5 | 27% | 3% | 17 |
9 | LOW PRESSURE DEPOSITION | 4 | 31% | 2% | 12 |
10 | TETRAETHYLORTHOSILICATE TEOS | 4 | 67% | 1% | 4 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
PROCESS AND FILM CHARACTERIZATION OF LOW-PRESSURE TETRAETHYLORTHOSILICATE-BOROPHOSPHOSILICATE GLASS | 1986 | 69 | 26 | 85% |
CVD of SiO2 and related materials: An overview | 1996 | 14 | 37 | 51% |
Chemical vapour deposition of thin film dielectrics | 2005 | 2 | 52 | 40% |
LOW-TEMPERATURE CHEMICAL-VAPOR-DEPOSITION PROCESSES AND DIELECTRICS FOR MICROELECTRONIC CIRCUIT MANUFACTURING AT IBM | 1995 | 19 | 60 | 20% |
Pyrolysis of tetraethoxysilane on Mo(100) at low temperatures | 1998 | 5 | 66 | 29% |
INFRARED SPECTROSCOPIC TECHNIQUES FOR QUANTITATIVE CHARACTERIZATION OF DIELECTRIC THIN-FILMS ON SILICON-WAFERS | 1994 | 11 | 87 | 24% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | QAS | 1 | 100% | 0.3% | 2 |
2 | SUR E CONDITIONING | 1 | 50% | 0.1% | 1 |
3 | ADV MEMORY DEV | 1 | 16% | 0.4% | 3 |
4 | ADV PROD RD | 0 | 33% | 0.1% | 1 |
5 | CUSTOMER PLICAT GRP | 0 | 33% | 0.1% | 1 |
6 | OBERFLACHENTECHNIK PLASMATECH WERKSTOFFENT | 0 | 33% | 0.1% | 1 |
7 | SEMICOND DEVICES MICROELECT | 0 | 33% | 0.1% | 1 |
8 | CNRSUMR 6122 | 0 | 25% | 0.1% | 1 |
9 | ADV CUSTOM TECHNOL | 0 | 20% | 0.1% | 1 |
10 | ADV MEMORY PROD DEV | 0 | 20% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000159298 | SILICON TETRAACETATE//F 2 LASER//N2O GAS |
2 | 0.0000149835 | CHARGED NANOPARTICLES//SASAKI TEAM//MICROSTRUCT SCI MAT |
3 | 0.0000143226 | HMDSO//HEXAMETHYLDISILOXANE//HEXAMETHYLDISILOXANE HMDSO |
4 | 0.0000118114 | SPRAY ETCHING//ETCH FACTOR//ETCHING FACTOR |
5 | 0.0000112512 | CVD W//FEATURE SCALE MODEL//FOCUS NEW YORK |
6 | 0.0000112242 | HITACHI ADM//SOLAR CELL METALLIZATION// |
7 | 0.0000105886 | LASER POLISHING//SELF ION ASSISTED DEPOSITION//QUASISTATIC PROBLEM OF THERMOELASTICITY |
8 | 0.0000087740 | SILICON OXYNITRIDE//SILICON NITRIDE FILMS//CONDUCTANCE TRANSIENTS |
9 | 0.0000077820 | ELECTRICAL PASSIVATION OF STRUCTURAL DEFECTS//GAAS DIODE//TRIPLE CRYSTAL DIFFRACTOMETRY |
10 | 0.0000068377 | FIRE RADIOMETER//OPTO THERMAL RADIOMETRY//INFRARED EMISSION SPECTROMETRY |