Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 14601 | 693 | 23.7 | 73% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 1854 | 5551 | ATOMIC LAYER DEPOSITION//CHEMICAL VAPOR DEPOSITION//MOLECULAR LAYER DEPOSITION MLD |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | RUO2 | Author keyword | 7 | 16% | 5% | 38 |
| 2 | RUOD3 | Author keyword | 6 | 100% | 1% | 4 |
| 3 | RU | Author keyword | 5 | 12% | 6% | 39 |
| 4 | RUTHENIUM FILMS | Author keyword | 5 | 63% | 1% | 5 |
| 5 | RUO2 THIN FILM | Author keyword | 4 | 75% | 0% | 3 |
| 6 | RUTHENIUM DIOXIDE | Author keyword | 4 | 18% | 3% | 21 |
| 7 | INTERUNIV SEMICONDUCTOR | Address | 3 | 100% | 0% | 3 |
| 8 | RU FILM | Author keyword | 3 | 100% | 0% | 3 |
| 9 | RUTHENIUM OXIDE | Author keyword | 3 | 10% | 4% | 30 |
| 10 | CAPACITOR ELECTRODE | Author keyword | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | RUO2 | 7 | 16% | 5% | 38 | Search RUO2 | Search RUO2 |
| 2 | RUOD3 | 6 | 100% | 1% | 4 | Search RUOD3 | Search RUOD3 |
| 3 | RU | 5 | 12% | 6% | 39 | Search RU | Search RU |
| 4 | RUTHENIUM FILMS | 5 | 63% | 1% | 5 | Search RUTHENIUM+FILMS | Search RUTHENIUM+FILMS |
| 5 | RUO2 THIN FILM | 4 | 75% | 0% | 3 | Search RUO2+THIN+FILM | Search RUO2+THIN+FILM |
| 6 | RUTHENIUM DIOXIDE | 4 | 18% | 3% | 21 | Search RUTHENIUM+DIOXIDE | Search RUTHENIUM+DIOXIDE |
| 7 | RU FILM | 3 | 100% | 0% | 3 | Search RU+FILM | Search RU+FILM |
| 8 | RUTHENIUM OXIDE | 3 | 10% | 4% | 30 | Search RUTHENIUM+OXIDE | Search RUTHENIUM+OXIDE |
| 9 | CAPACITOR ELECTRODE | 2 | 67% | 0% | 2 | Search CAPACITOR+ELECTRODE | Search CAPACITOR+ELECTRODE |
| 10 | RUTHENIUM THIN FILMS | 2 | 67% | 0% | 2 | Search RUTHENIUM+THIN+FILMS | Search RUTHENIUM+THIN+FILMS |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | RUTHENIUM DIOXIDE NANORODS | 31 | 92% | 2% | 12 |
| 2 | TETRAHYDROFURAN SOLVENT | 18 | 89% | 1% | 8 |
| 3 | RUO2 FILMS | 17 | 79% | 2% | 11 |
| 4 | SPUTTERED RUTHENIUM DIOXIDE | 17 | 79% | 2% | 11 |
| 5 | RUO2 THIN FILMS | 11 | 45% | 3% | 18 |
| 6 | RUTHENIUM FILMS | 8 | 70% | 1% | 7 |
| 7 | RUTHENIUM DIOXIDE | 8 | 19% | 5% | 37 |
| 8 | RUTHENIUM THIN FILMS | 7 | 41% | 2% | 14 |
| 9 | RUTHENIUM FILM | 6 | 80% | 1% | 4 |
| 10 | RUO2 NANORODS | 6 | 71% | 1% | 5 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Precursor design and reaction mechanisms for the atomic layer deposition of metal films | 2013 | 11 | 128 | 22% |
| Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials | 2013 | 4 | 98 | 39% |
| Chemical vapour-phase deposition of ruthenium-containing thin films | 2014 | 0 | 73 | 70% |
| TiO2-based structures for nanoscale memory applications | 2013 | 6 | 71 | 24% |
| Ruthenium complexes as precursors for chemical vapor-deposition (CVD) | 2014 | 0 | 115 | 44% |
| Precursors as enablers of ALD technology: Contributions from University of Helsinki | 2013 | 6 | 195 | 15% |
| Future direction for a diffusion barrier in future high-density volatile and nonvolatile memory devices | 2002 | 22 | 99 | 10% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | INTERUNIV SEMICONDUCTOR | 3 | 100% | 0.4% | 3 |
| 2 | PASMANT GRP | 1 | 100% | 0.3% | 2 |
| 3 | ADV PROC C ACITOR | 1 | 27% | 0.6% | 4 |
| 4 | ULSI PROC ENGN | 1 | 25% | 0.4% | 3 |
| 5 | ABT MA INENBAU | 1 | 23% | 0.4% | 3 |
| 6 | ADV ANALYT GRP | 1 | 50% | 0.1% | 1 |
| 7 | DIPART CIMA | 1 | 50% | 0.1% | 1 |
| 8 | HEATING LIGHTING | 1 | 50% | 0.1% | 1 |
| 9 | KERN STRALING FYS | 1 | 50% | 0.1% | 1 |
| 10 | NANOLIQUID PROC PROJECT | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000165283 | ATOMIC LAYER DEPOSITION//MOLECULAR LAYER DEPOSITION MLD//MOLECULAR LAYER DEPOSITION |
| 2 | 0.0000158329 | MEMS PATTERNING//ETCHING DAMAGE//RUOX PT |
| 3 | 0.0000153260 | IRIDIUM COATING//IRIDIUM COATINGS//IR COATING |
| 4 | 0.0000103101 | IRIDIUM OXIDE//WATER ELECTROLYSIS//CHLORINE EVOLUTION |
| 5 | 0.0000091048 | DIFFUSION BARRIER//CU METALLIZATION//TANTALUM NITRIDE |
| 6 | 0.0000084145 | BST//BARIUM STRONTIUM TITANATE//TUNABILITY |
| 7 | 0.0000079665 | THICK FILM RESISTORS//ELECTROCOMPONENT SCIENCE AND TECHNOLOGY//THICK FILM RESISTOR |
| 8 | 0.0000078378 | PROPANOL OXIDATION//PLATINIC ACID//POLYNUCLEAR RUTHENIUM COMPLEXES |
| 9 | 0.0000069983 | METAL INSULATOR METAL MIM CAPACITOR//VOLTAGE COEFFICIENT OF CAPACITANCE VCC//METAL INSULATOR METAL MIM |
| 10 | 0.0000065958 | PZT//PZT THIN FILMS//INTEGRATED FERROELECTRICS |