Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
14407 | 705 | 22.0 | 62% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
138 | 22619 | IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | TUNNELING FIELD EFFECT TRANSISTOR TFET | Author keyword | 155 | 95% | 8% | 53 |
2 | TUNNEL FIELD EFFECT TRANSISTOR TFET | Author keyword | 134 | 88% | 9% | 64 |
3 | TUNNEL FET TFET | Author keyword | 47 | 86% | 3% | 24 |
4 | BAND TO BAND TUNNELING BTBT | Author keyword | 37 | 55% | 7% | 47 |
5 | BAND TO BAND TUNNELING | Author keyword | 30 | 37% | 9% | 65 |
6 | TUNNEL FET | Author keyword | 28 | 52% | 5% | 38 |
7 | TUNNEL FIELD EFFECT TRANSISTOR | Author keyword | 25 | 75% | 3% | 18 |
8 | TUNNEL TRANSISTOR | Author keyword | 19 | 70% | 2% | 16 |
9 | SUBTHRESHOLD SWING | Author keyword | 18 | 31% | 7% | 48 |
10 | TUNNEL FIELD EFFECT TRANSISTORS TFETS | Author keyword | 17 | 100% | 1% | 8 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | TFETS | 35 | 86% | 3% | 18 |
2 | FET | 24 | 23% | 13% | 94 |
3 | MV DEC | 11 | 69% | 1% | 9 |
4 | TUNNEL FET | 10 | 63% | 1% | 10 |
5 | TUNNEL FETS | 8 | 70% | 1% | 7 |
6 | I MOS | 8 | 45% | 2% | 14 |
7 | REDUCED OPERATING VOLTAGE | 6 | 80% | 1% | 4 |
8 | TFET | 6 | 80% | 1% | 4 |
9 | MOS I MOS | 6 | 58% | 1% | 7 |
10 | EFFECT TRANSISTORS TFETS | 3 | 100% | 0% | 3 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Tunnel field-effect transistors as energy-efficient electronic switches | 2011 | 286 | 45 | 73% |
Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap | 2015 | 1 | 27 | 33% |
Low-power tunnel field effect transistors using mixed As and Sb based heterostructures | 2013 | 3 | 46 | 70% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | EXCELLENCE NANO TECHNOL | 6 | 80% | 0.6% | 4 |
2 | TD TEAM S LSI | 6 | 71% | 0.7% | 5 |
3 | NANOELECT DEVICES NANO | 5 | 43% | 1.3% | 9 |
4 | PROC INTEGRAT TEAM S LSI | 2 | 67% | 0.3% | 2 |
5 | TSUKUBA WEST SCR | 2 | 67% | 0.3% | 2 |
6 | NANOELECT DEVICES | 2 | 20% | 1.3% | 9 |
7 | TD TEAM | 2 | 43% | 0.4% | 3 |
8 | PEKING UNIV SHENZHEN SOC | 1 | 50% | 0.3% | 2 |
9 | PETER GRUNBERG 9 | 1 | 18% | 0.9% | 6 |
10 | SEMICOND BUSINESS GRP | 1 | 15% | 0.9% | 6 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000154722 | CAPACITORLESS DRAM//1T DRAM//CAPACITORLESS 1T DRAM |
2 | 0.0000135156 | HORIZONTAL CURRENT BIPOLAR TRANSISTOR HCBT//DYNAMIC THRESHOLD MOSFET DTMOS//LATERAL BIPOLAR TRANSISTOR |
3 | 0.0000097270 | DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS |
4 | 0.0000096684 | NETWORK COMPUTAT NANOTECHNOL//QUASI BALLISTIC TRANSPORT//JOURNAL OF COMPUTATIONAL ELECTRONICS |
5 | 0.0000086170 | SCHOTTKY BARRIER SB//DOPANT SEGREGATION DS//SCHOTTKY BARRIER SB MOSFET |
6 | 0.0000061996 | DEVICE MODELLING GRP//RANDOM DOPANT//DEVICE MODELING GRP |
7 | 0.0000047169 | GESN//L NESS//GERMANIUM TIN |
8 | 0.0000044274 | DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION |
9 | 0.0000044098 | GAAS MOSFET//INTERFACE CONTROL LAYER//III V MOSFET |
10 | 0.0000040264 | MAT SEMICOND//GAAS NANOWIRES//POLYMER MAT CHEM NCHREM |