Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
14250 | 716 | 20.0 | 82% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | AL1 XINXN | Author keyword | 12 | 86% | 1% | 6 |
2 | ALINN | Author keyword | 10 | 39% | 3% | 21 |
3 | RESONANT CAVITY LIGHT EMITTING DIODE RCLED | Author keyword | 8 | 70% | 1% | 7 |
4 | RESONANT CAVITY LIGHT EMITTING DIODES | Author keyword | 8 | 70% | 1% | 7 |
5 | RESONANT CAVITY LIGHT EMITTING DIODES RCLEDS | Author keyword | 5 | 63% | 1% | 5 |
6 | 3 DB MODULATION BANDWIDTH | Author keyword | 3 | 60% | 0% | 3 |
7 | INALN | Author keyword | 2 | 17% | 2% | 13 |
8 | TEXAS SUPERCOND UNIV HOUSTON TCSUH | Address | 2 | 67% | 0% | 2 |
9 | QUANTUM ELECT PHOTON | Address | 2 | 10% | 3% | 18 |
10 | SOLID STATE PHYS ELE ON MICROSCOPY | Address | 2 | 43% | 0% | 3 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | ALINN | 77 | 77% | 7% | 53 |
2 | AL1 XINXN | 18 | 67% | 2% | 16 |
3 | ALXIN1 XN | 15 | 88% | 1% | 7 |
4 | ALINN LAYERS | 8 | 100% | 1% | 5 |
5 | HIGH REFLECTIVITY | 8 | 38% | 2% | 16 |
6 | AL1 XINXN THIN FILMS | 6 | 80% | 1% | 4 |
7 | DISTRIBUTED BRAGG REFLECTORS | 6 | 15% | 5% | 36 |
8 | ALXIN1 XN FILMS | 4 | 75% | 0% | 3 |
9 | INXAL1 XN | 2 | 44% | 1% | 4 |
10 | 650 NM | 2 | 24% | 1% | 8 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
Current status of AlInN layers lattice-matched to GaN for photonics and electronics | 2007 | 173 | 87 | 48% |
High-efficiency semiconductor resonant-cavity light-emitting diodes: A review | 2002 | 79 | 44 | 39% |
Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities | 2005 | 39 | 59 | 59% |
Resonant cavity light emitting diode for a polymer optical fibre system | 2002 | 15 | 14 | 64% |
Green photonics | 2012 | 1 | 45 | 18% |
Crucial structure elements of possible nitride vertical-cavity surface-emitting lasers | 2001 | 0 | 89 | 21% |
Designing guidelines for possible continuous-wave-operating nitride vertical-cavity surface-emitting lasers | 2000 | 6 | 64 | 8% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | TEXAS SUPERCOND UNIV HOUSTON TCSUH | 2 | 67% | 0.3% | 2 |
2 | QUANTUM ELECT PHOTON | 2 | 10% | 2.5% | 18 |
3 | SOLID STATE PHYS ELE ON MICROSCOPY | 2 | 43% | 0.4% | 3 |
4 | SOLID STATE PHYS SEMICOND EPITAXY | 1 | 38% | 0.4% | 3 |
5 | MICRO OPTOELE ON | 1 | 50% | 0.3% | 2 |
6 | LASPE | 1 | 40% | 0.3% | 2 |
7 | LPN CNRS | 1 | 33% | 0.3% | 2 |
8 | IPEQ | 1 | 14% | 0.7% | 5 |
9 | EA 4257 | 1 | 50% | 0.1% | 1 |
10 | ELE OOPT MAT ENGN | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000148734 | LIGHT EXTRACTION EFFICIENCY//LIGHT EMITTING DIODE LED//PATTERNED SAPPHIRE SUBSTRATE PSS |
2 | 0.0000129444 | INGAN//EFFICIENCY DROOP//ELECTRON BLOCKING LAYER EBL |
3 | 0.0000115972 | REAL CAVITY MODEL//VIRTUAL CAVITY MODEL//COUPLING TENSOR |
4 | 0.0000104211 | INN//INDIUM NITRIDE//INN PROJECT |
5 | 0.0000103976 | SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN |
6 | 0.0000089974 | SI111 SUBSTRATES//SI111 SUBSTRATE//ALN BUFFER |
7 | 0.0000079389 | TRANSISTOR LASER//TRANSISTOR LASER TL//MICRONANOSYST TECHNOL |
8 | 0.0000076722 | SPMM//PHOTON MULTISCALE NANOMAT//BUILT IN FIELDS |
9 | 0.0000076608 | ACT OPTOGAN//INGAAS ALASSB//FESTA S |
10 | 0.0000075676 | ALGAN GAN//HIGH ELECTRON MOBILITY TRANSISTOR HEMT//CURRENT COLLAPSE |