Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 13932 | 740 | 16.7 | 49% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | OVAL DEFECTS | Author keyword | 5 | 63% | 1% | 5 |
| 2 | SEEIE | Address | 2 | 67% | 0% | 2 |
| 3 | GA AS BI SOLUTION | Author keyword | 1 | 100% | 0% | 2 |
| 4 | MBE GAAS | Author keyword | 1 | 100% | 0% | 2 |
| 5 | A3B5 | Author keyword | 1 | 33% | 0% | 2 |
| 6 | BE DOPED GAAS | Author keyword | 1 | 50% | 0% | 1 |
| 7 | CRACKER CELL | Author keyword | 1 | 50% | 0% | 1 |
| 8 | DEFECT POINTS | Author keyword | 1 | 50% | 0% | 1 |
| 9 | NORTEL ADV COMPONENTS | Address | 1 | 50% | 0% | 1 |
| 10 | SILICON DOPED GAAS | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | OVAL DEFECTS | 5 | 63% | 1% | 5 | Search OVAL+DEFECTS | Search OVAL+DEFECTS |
| 2 | GA AS BI SOLUTION | 1 | 100% | 0% | 2 | Search GA+AS+BI+SOLUTION | Search GA+AS+BI+SOLUTION |
| 3 | MBE GAAS | 1 | 100% | 0% | 2 | Search MBE+GAAS | Search MBE+GAAS |
| 4 | A3B5 | 1 | 33% | 0% | 2 | Search A3B5 | Search A3B5 |
| 5 | BE DOPED GAAS | 1 | 50% | 0% | 1 | Search BE+DOPED+GAAS | Search BE+DOPED+GAAS |
| 6 | CRACKER CELL | 1 | 50% | 0% | 1 | Search CRACKER+CELL | Search CRACKER+CELL |
| 7 | DEFECT POINTS | 1 | 50% | 0% | 1 | Search DEFECT+POINTS | Search DEFECT+POINTS |
| 8 | SILICON DOPED GAAS | 1 | 50% | 0% | 1 | Search SILICON+DOPED+GAAS | Search SILICON+DOPED+GAAS |
| 9 | SPONTANEOUS RADIATIVE RECOMBINATION | 1 | 50% | 0% | 1 | Search SPONTANEOUS+RADIATIVE+RECOMBINATION | Search SPONTANEOUS+RADIATIVE+RECOMBINATION |
| 10 | EDGE GROWTH | 1 | 29% | 0% | 2 | Search EDGE+GROWTH | Search EDGE+GROWTH |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | RESIDUAL DONORS | 12 | 86% | 1% | 6 |
| 2 | OVAL DEFECTS | 11 | 40% | 3% | 21 |
| 3 | HIGH PURITY GAAS | 4 | 22% | 2% | 17 |
| 4 | HEAT TREATED INP | 3 | 100% | 0% | 3 |
| 5 | ARSENIC ATOMS | 2 | 67% | 0% | 2 |
| 6 | DESIGNED MBE SYSTEM | 2 | 67% | 0% | 2 |
| 7 | ARSENIC SOURCE | 1 | 38% | 0% | 3 |
| 8 | ACCEPTOR ASSOCIATED EMISSION | 1 | 100% | 0% | 2 |
| 9 | GALLIUM MELTS | 1 | 100% | 0% | 2 |
| 10 | PURITY EPITAXIAL GAAS | 1 | 100% | 0% | 2 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Novel features of photoluminescence spectra from acceptor-doped GaAs: Formation of acceptor-acceptor pair emissions and optical compensation effect | 1996 | 8 | 145 | 45% |
| ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - CURRENT STATUS (REVIEW) | 1984 | 40 | 17 | 53% |
| CHARACTERIZATION OF GALLIUM-ARSENIDE BY MAGNETOOPTICAL PHOTOLUMINESCENT SPECTROSCOPY | 1986 | 0 | 4 | 100% |
| III-V-COMPOUNDS - INTRODUCTION | 1988 | 2 | 39 | 28% |
| MOLECULAR-BEAM EPITAXY OF HETEROSTRUCTURES MADE OF III-V-COMPOUNDS | 1988 | 5 | 63 | 13% |
| MOLECULAR-BEAM EPITAXY OF III-V COMPOUNDS - TECHNOLOGY AND GROWTH-PROCESS | 1981 | 34 | 16 | 38% |
| PHOTO-LUMINESCENCE AS A DIAGNOSTIC OF SEMICONDUCTORS | 1982 | 80 | 27 | 7% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | SEEIE | 2 | 67% | 0.3% | 2 |
| 2 | NORTEL ADV COMPONENTS | 1 | 50% | 0.1% | 1 |
| 3 | MF STELMAKH POLYUS | 0 | 33% | 0.1% | 1 |
| 4 | MILLIMETER WAVE ELECT MWE | 0 | 33% | 0.1% | 1 |
| 5 | SEMICOND PROC RD | 0 | 20% | 0.1% | 1 |
| 6 | COMMUN SYST INFORMAT | 0 | 100% | 0.1% | 1 |
| 7 | ELECT MAT COMPONENTS S | 0 | 100% | 0.1% | 1 |
| 8 | J AN KAGAMI MEM MAT SCI TECHNOL | 0 | 100% | 0.1% | 1 |
| 9 | TRANSMISS DEVICE S | 0 | 100% | 0.1% | 1 |
| 10 | UA 358 | 0 | 100% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000129854 | REFLECTION MASS SPECTROMETRY//2D ISLAND//INTERFACE DISORDER |
| 2 | 0.0000125098 | TRIMETHYLINDIUM//CHEMICAL BEAM EPITAXY CBE//MOLECULAR LAYER EPITAXY |
| 3 | 0.0000110808 | ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS |
| 4 | 0.0000109100 | ING ELECT SEES//SECC PUEBLA//ALLOY SOURCE |
| 5 | 0.0000107864 | EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE |
| 6 | 0.0000097589 | DX CENTERS//DX CENTER//DX CENTRE |
| 7 | 0.0000097523 | CARBON DOPING//CBR4//C DOPED GAAS |
| 8 | 0.0000080131 | MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS |
| 9 | 0.0000072465 | INALAS INP//INALAS ALLOYS//INALAS ALASSB |
| 10 | 0.0000070465 | DOT IN A WELL STRUCTURES//EXCITATION POWER DEPENDENCES//RECOMBINATION BARRIER |