Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
13696 | 756 | 18.5 | 65% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | OHMIC CONTACT | Author keyword | 12 | 13% | 11% | 83 |
2 | OHMIC CONTACTS | Author keyword | 8 | 13% | 8% | 59 |
3 | P TYPE SIC | Author keyword | 4 | 36% | 1% | 8 |
4 | MRG | Address | 4 | 28% | 1% | 11 |
5 | AL TI CONTACTS | Author keyword | 3 | 100% | 0% | 3 |
6 | MATH SCI SPORTS EDUC | Address | 3 | 100% | 0% | 3 |
7 | OHMIC METAL CONTACTS | Author keyword | 3 | 100% | 0% | 3 |
8 | SXFS | Author keyword | 3 | 100% | 0% | 3 |
9 | SPECIFIC CONTACT RESISTANCE | Author keyword | 3 | 16% | 2% | 16 |
10 | BIASED REACTION | Author keyword | 2 | 67% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | OHMIC CONTACT | 12 | 13% | 11% | 83 | Search OHMIC+CONTACT | Search OHMIC+CONTACT |
2 | OHMIC CONTACTS | 8 | 13% | 8% | 59 | Search OHMIC+CONTACTS | Search OHMIC+CONTACTS |
3 | P TYPE SIC | 4 | 36% | 1% | 8 | Search P+TYPE+SIC | Search P+TYPE+SIC |
4 | AL TI CONTACTS | 3 | 100% | 0% | 3 | Search AL+TI+CONTACTS | Search AL+TI+CONTACTS |
5 | OHMIC METAL CONTACTS | 3 | 100% | 0% | 3 | Search OHMIC+METAL+CONTACTS | Search OHMIC+METAL+CONTACTS |
6 | SXFS | 3 | 100% | 0% | 3 | Search SXFS | Search SXFS |
7 | SPECIFIC CONTACT RESISTANCE | 3 | 16% | 2% | 16 | Search SPECIFIC+CONTACT+RESISTANCE | Search SPECIFIC+CONTACT+RESISTANCE |
8 | BIASED REACTION | 2 | 67% | 0% | 2 | Search BIASED+REACTION | Search BIASED+REACTION |
9 | NI OHMIC CONTACT | 2 | 67% | 0% | 2 | Search NI+OHMIC+CONTACT | Search NI+OHMIC+CONTACT |
10 | CONTACT RESISTIVITY | 2 | 13% | 2% | 14 | Search CONTACT+RESISTIVITY | Search CONTACT+RESISTIVITY |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | AL TI CONTACTS | 11 | 78% | 1% | 7 |
2 | ION BACKSCATTERING | 7 | 46% | 2% | 12 |
3 | NICKEL CONTACTS | 4 | 75% | 0% | 3 |
4 | NICKEL TITANIUM OHMIC CONTACTS | 3 | 100% | 0% | 3 |
5 | DIFFERENT ANNEALING TEMPERATURES | 2 | 67% | 0% | 2 |
6 | DEVICE TECHNOLOGIES | 1 | 50% | 0% | 2 |
7 | DIODE FORMATION | 1 | 100% | 0% | 2 |
8 | EPITAXIAL TITANIUM CARBIDE | 1 | 100% | 0% | 2 |
9 | NI CONTACTS | 1 | 100% | 0% | 2 |
10 | POLAR FACES | 1 | 50% | 0% | 2 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
A CRITICAL-REVIEW OF OHMIC AND RECTIFYING CONTACTS FOR SILICON-CARBIDE | 1995 | 265 | 68 | 53% |
Surface studies on SiC as related to contacts | 1997 | 67 | 55 | 51% |
Building blocks for SiC devices: Ohmic contacts, Schottky contacts, and p-n junctions | 1998 | 20 | 105 | 53% |
Wide gap semiconductor microwave devices | 2007 | 38 | 159 | 9% |
Interface Reactions and Synthetic Reaction of Composite Systems | 2010 | 1 | 32 | 41% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MRG | 4 | 28% | 1.5% | 11 |
2 | MATH SCI SPORTS EDUC | 3 | 100% | 0.4% | 3 |
3 | WIDE BAND G MAT | 1 | 50% | 0.3% | 2 |
4 | IND MICROELECT | 1 | 23% | 0.4% | 3 |
5 | ALLISON S 206 | 1 | 50% | 0.1% | 1 |
6 | CNRS CEA SNECMA PROP SOLIDE | 1 | 50% | 0.1% | 1 |
7 | DIMES S | 1 | 50% | 0.1% | 1 |
8 | DRECAMSPCSISIMA | 1 | 50% | 0.1% | 1 |
9 | ECL LYON | 1 | 50% | 0.1% | 1 |
10 | ELECT SCI ENGN SAKYO KU | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000212432 | 4H SIC//SILICON CARBIDE SIC//BIPOLAR JUNCTION TRANSISTORS BJTS |
2 | 0.0000204208 | SIMA//HEXAGONAL SURFACES//DSMDRECAMSPCSI |
3 | 0.0000109807 | 4H SIC MESFET//MESFET//MESFETS |
4 | 0.0000100781 | 3C SIC//FG NANOTECHNOL//HOLLOW VOID |
5 | 0.0000096124 | MICROPIPE//SUBLIMATION GROWTH//MICROPIPES |
6 | 0.0000092338 | IN FRANTZEVICH PROBLEMS MAT SCI//GROWTH TECHNIQUES//SEMICOND HETEROSTRUCT |
7 | 0.0000088367 | LEHRSTUHL THEOR FESTKORPERPHYS//SEMI INSULATING SIC//TEMPERATURE DEPENDENCE OF MAJORITY CARRIER CONCENTRATION |
8 | 0.0000072288 | SERIES RESISTANCE//BARRIER INHOMOGENEITY//IDEALITY FACTOR |
9 | 0.0000068277 | BRAZING//JOINING//ACTIVE BRAZING |
10 | 0.0000067237 | P GAN//OHMIC CONTACT//OHMIC CONTACTS |