Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
13539 | 765 | 19.4 | 73% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SI1 YCY | Author keyword | 23 | 86% | 2% | 12 |
2 | SI1 X YGEXCY | Author keyword | 13 | 62% | 2% | 13 |
3 | SICGE | Author keyword | 12 | 86% | 1% | 6 |
4 | SIGEC | Author keyword | 10 | 35% | 3% | 24 |
5 | SI1 XCX | Author keyword | 6 | 80% | 1% | 4 |
6 | SI1 YCY ALLOY | Author keyword | 6 | 80% | 1% | 4 |
7 | GERMANIUM CARBON EPILAYER | Author keyword | 6 | 100% | 1% | 4 |
8 | MIXED SIGNAL PROC GRP | Address | 4 | 75% | 0% | 3 |
9 | PLIE | Author keyword | 4 | 56% | 1% | 5 |
10 | LOW TEMPERATURE SILICON EPITAXY | Author keyword | 3 | 57% | 1% | 4 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SI1 YCY | 23 | 86% | 2% | 12 | Search SI1+YCY | Search SI1+YCY |
2 | SI1 X YGEXCY | 13 | 62% | 2% | 13 | Search SI1+X+YGEXCY | Search SI1+X+YGEXCY |
3 | SICGE | 12 | 86% | 1% | 6 | Search SICGE | Search SICGE |
4 | SIGEC | 10 | 35% | 3% | 24 | Search SIGEC | Search SIGEC |
5 | SI1 XCX | 6 | 80% | 1% | 4 | Search SI1+XCX | Search SI1+XCX |
6 | SI1 YCY ALLOY | 6 | 80% | 1% | 4 | Search SI1+YCY+ALLOY | Search SI1+YCY+ALLOY |
7 | GERMANIUM CARBON EPILAYER | 6 | 100% | 1% | 4 | Search GERMANIUM+CARBON+EPILAYER | Search GERMANIUM+CARBON+EPILAYER |
8 | PLIE | 4 | 56% | 1% | 5 | Search PLIE | Search PLIE |
9 | LOW TEMPERATURE SILICON EPITAXY | 3 | 57% | 1% | 4 | Search LOW+TEMPERATURE+SILICON+EPITAXY | Search LOW+TEMPERATURE+SILICON+EPITAXY |
10 | SI 6H SIC HETEROJUNCTION | 3 | 100% | 0% | 3 | Search SI+6H+SIC+HETEROJUNCTION | Search SI+6H+SIC+HETEROJUNCTION |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | SI1 X YGEXCY | 98 | 76% | 9% | 69 |
2 | SI1 X YGEXCY ALLOYS | 56 | 85% | 4% | 29 |
3 | SI1 YCY ALLOYS | 55 | 82% | 4% | 32 |
4 | SI1 YCY | 44 | 74% | 4% | 32 |
5 | SUBSTITUTIONAL CARBON INCORPORATION | 33 | 83% | 2% | 19 |
6 | SUBSTITUTIONAL CARBON | 19 | 63% | 2% | 19 |
7 | C4X4 RECONSTRUCTION | 19 | 70% | 2% | 16 |
8 | SI1 XCX ALLOYS | 12 | 86% | 1% | 6 |
9 | C INCORPORATION | 11 | 100% | 1% | 6 |
10 | SI1 X YGEXCY EPITAXIAL LAYERS | 11 | 100% | 1% | 6 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
---|---|---|---|---|
General trends of the carbon penetration in Si(001) surfaces: influences of relevant parameters | 2006 | 3 | 67 | 67% |
GROWTH AND PROPERTIES OF STRAINED SI1-X-YGEXCY LAYERS | 1995 | 67 | 57 | 53% |
Synthesis and atomic and electronic structure of new Si-Ge-C alloys and compounds | 1998 | 14 | 46 | 65% |
Si1-yCy and Si1-x-yGexCy alloy layers | 1999 | 3 | 87 | 79% |
Structural and vibrational properties of carbon impurities in crystalline silicon | 2001 | 3 | 24 | 63% |
Growth of silicon-germanium alloy layers | 2000 | 7 | 71 | 21% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | MIXED SIGNAL PROC GRP | 4 | 75% | 0.4% | 3 |
2 | CNRS UA 6004 | 3 | 100% | 0.4% | 3 |
3 | KONAGAI | 1 | 100% | 0.3% | 2 |
4 | UMR 7014 4 | 1 | 100% | 0.3% | 2 |
5 | PHYS SPECT ELE ON | 1 | 27% | 0.4% | 3 |
6 | CNRS UPR 258 | 1 | 50% | 0.1% | 1 |
7 | FESTKORPER HALBLEITERPHYS | 1 | 50% | 0.1% | 1 |
8 | POWDER TECHNOL MAT SCI | 1 | 50% | 0.1% | 1 |
9 | SIMULAT MODELISAT SCI MAT | 1 | 50% | 0.1% | 1 |
10 | MERB | 1 | 29% | 0.3% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000167727 | STRAINED SI//SIGE//STRAINED SILICON |
2 | 0.0000156814 | STRAINED SI1 XGEX SI QUANTUM WELLS//SI SIGE SUPERLATTICE//STRAINED SIGE SI |
3 | 0.0000095744 | ATOMIC LAYER DOPING//SI EPITAXIAL GROWTH//GERMANIUM SILICON COMPOUNDS |
4 | 0.0000095410 | ELECTRON BEAM ANNEALING//RAFTER//ION BEAM SYNTHESIS IBS |
5 | 0.0000092598 | 3C SIC//FG NANOTECHNOL//HOLLOW VOID |
6 | 0.0000084154 | SCHOTTKY BARRIER SB//DOPANT SEGREGATION DS//SCHOTTKY BARRIER SB MOSFET |
7 | 0.0000076531 | GESN//L NESS//GERMANIUM TIN |
8 | 0.0000074915 | GERMANIUM CARBON//A SIGE//GE1 XCX |
9 | 0.0000059039 | GE ISLANDS//SIGE ISLANDS//HUT CLUSTERS |
10 | 0.0000056626 | SURFACTANT MEDIATED EPITAXY//BI NANOLINES//SI100 2X1 SB |