Class information for:
Level 1: ELECT MAT DEVICES NANOSTRUCT//L DLTS//CNR IMM MATIS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
13418 774 23.4 59%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
372 16511 SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ELECT MAT DEVICES NANOSTRUCT Address 8 45% 2% 14
2 L DLTS Author keyword 8 75% 1% 6
3 CNR IMM MATIS Address 5 38% 1% 11
4 E CENTER Author keyword 3 35% 1% 8
5 GE VACANCY Author keyword 3 100% 0% 3
6 ELECT SOLIDE SYST Address 3 22% 2% 12
7 PHYS PLICAT SEMICOND Address 3 35% 1% 6
8 MATIS IMM CNR Address 2 26% 1% 8
9 ASSOCIATED SECT ESAT INSYS Address 2 67% 0% 2
10 ELE ON SOLIDE SYST Address 2 67% 0% 2

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 L DLTS 8 75% 1% 6 Search L+DLTS Search L+DLTS
2 E CENTER 3 35% 1% 8 Search E+CENTER Search E+CENTER
3 GE VACANCY 3 100% 0% 3 Search GE+VACANCY Search GE+VACANCY
4 CORE ELECTRONS 2 28% 1% 5 Search CORE+ELECTRONS Search CORE+ELECTRONS
5 DIVACANCY 2 14% 1% 10 Search DIVACANCY Search DIVACANCY
6 ANNIHILATION RADIATION 2 26% 1% 5 Search ANNIHILATION+RADIATION Search ANNIHILATION+RADIATION
7 ANGULAR CORRELATION CURVES 1 100% 0% 2 Search ANGULAR+CORRELATION+CURVES Search ANGULAR+CORRELATION+CURVES
8 AS GROWN DEFECTS 1 50% 0% 2 Search AS+GROWN+DEFECTS Search AS+GROWN+DEFECTS
9 CRYOGENIC IMPLANTATION 1 50% 0% 2 Search CRYOGENIC+IMPLANTATION Search CRYOGENIC+IMPLANTATION
10 ELECTRICAL LEVELS 1 50% 0% 2 Search ELECTRICAL+LEVELS Search ELECTRICAL+LEVELS

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SINGLE VACANCY 15 73% 1% 11
2 RESONANT BONDS 11 78% 1% 7
3 SYMMETRY LOWERING DISTORTION 10 73% 1% 8
4 GE CRYSTALS 10 61% 1% 11
5 N TYPE GERMANIUM 9 44% 2% 15
6 VACANCY OXYGEN COMPLEX 6 80% 1% 4
7 IRRADIATED GERMANIUM 4 67% 1% 4
8 RADIOACTIVE PROBES 4 67% 1% 4
9 CRYSTALLINE GERMANIUM 4 50% 1% 6
10 HIGH PURITY GERMANIUM 4 33% 1% 9

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Diffusion of n-type dopants in germanium 2014 8 139 71%
On the diffusion and activation of n-type dopants in Ge 2012 9 62 81%
Defect engineering strategies for germanium 2013 2 99 61%
Dopant-defect interactions in Ge: Density functional theory calculations 2012 1 66 85%
Point defect diffusion in Si and SiGe revisited through atomistic simulations 2012 5 61 30%
Role of point defects on B diffusion in Ge 2012 0 43 63%
Advances in positron annihilation spectroscopy of Si, Ge and their alloys 2012 1 23 30%
Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors 2004 133 102 7%
Copper related diffusion phenomena in germanium and silicon 2004 34 65 15%
Advances in ion beam modification of semiconductors 2015 0 133 17%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ELECT MAT DEVICES NANOSTRUCT 8 45% 1.8% 14
2 CNR IMM MATIS 5 38% 1.4% 11
3 ELECT SOLIDE SYST 3 22% 1.6% 12
4 PHYS PLICAT SEMICOND 3 35% 0.8% 6
5 MATIS IMM CNR 2 26% 1.0% 8
6 ASSOCIATED SECT ESAT INSYS 2 67% 0.3% 2
7 ELE ON SOLIDE SYST 2 67% 0.3% 2
8 SIMULAT ATOMIST SIM L 2 67% 0.3% 2
9 IKS PHYS 1 50% 0.3% 2
10 SIMULAT ATOMIST L SIM 1 18% 0.8% 6

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000218885 NI GERMANIDE//MBE//GERMANIUM GE
2 0.0000167362 LIFETIME CONTROL//SEMI INSULATING MATERIALS//POWER DIODES
3 0.0000152347 TRANSIENT ENHANCED DIFFUSION//SWAMP//PAIR DIFFUSION MODEL
4 0.0000129104 LOCAL VIBRATION MODES//DIRECT FAST SCARLET 4BS//GAAS C
5 0.0000110252 GESN//L NESS//GERMANIUM TIN
6 0.0000104274 AMORPHOUS III V SEMICONDUCTORS//GAAS1 XNX THIN FILMS//SUNAG
7 0.0000097562 OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON
8 0.0000088111 CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD
9 0.0000087183 GETTERING//GETTERING EFFICIENCY//SI AU
10 0.0000070946 HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN IN SI