Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 13056 | 799 | 16.9 | 75% |
Classes in level above (level 2) |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | INASP INP | Author keyword | 9 | 83% | 1% | 5 |
| 2 | INASP | Author keyword | 2 | 27% | 1% | 8 |
| 3 | QUANTUM PHOTOVOLTA GRP | Address | 2 | 67% | 0% | 2 |
| 4 | JOINT IL | Address | 2 | 43% | 0% | 3 |
| 5 | INAS06P04 | Author keyword | 1 | 100% | 0% | 2 |
| 6 | SOLID SOURCE MOLECULAR BEAM EPITAXY SSMBE | Author keyword | 1 | 27% | 0% | 3 |
| 7 | GAS SOURCE MOLECULAR BEAM EPITAXY GSMBE | Author keyword | 1 | 17% | 1% | 5 |
| 8 | AS P EXCHANGE REACTION | Author keyword | 1 | 33% | 0% | 2 |
| 9 | CONDUCTION BAND DISCONTINUITY | Author keyword | 1 | 33% | 0% | 2 |
| 10 | SEZ PARMA | Address | 1 | 21% | 0% | 3 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | INASP INP | 9 | 83% | 1% | 5 | Search INASP+INP | Search INASP+INP |
| 2 | INASP | 2 | 27% | 1% | 8 | Search INASP | Search INASP |
| 3 | INAS06P04 | 1 | 100% | 0% | 2 | Search INAS06P04 | Search INAS06P04 |
| 4 | SOLID SOURCE MOLECULAR BEAM EPITAXY SSMBE | 1 | 27% | 0% | 3 | Search SOLID+SOURCE+MOLECULAR+BEAM+EPITAXY+SSMBE | Search SOLID+SOURCE+MOLECULAR+BEAM+EPITAXY+SSMBE |
| 5 | GAS SOURCE MOLECULAR BEAM EPITAXY GSMBE | 1 | 17% | 1% | 5 | Search GAS+SOURCE+MOLECULAR+BEAM+EPITAXY+GSMBE | Search GAS+SOURCE+MOLECULAR+BEAM+EPITAXY+GSMBE |
| 6 | AS P EXCHANGE REACTION | 1 | 33% | 0% | 2 | Search AS+P+EXCHANGE+REACTION | Search AS+P+EXCHANGE+REACTION |
| 7 | CONDUCTION BAND DISCONTINUITY | 1 | 33% | 0% | 2 | Search CONDUCTION+BAND+DISCONTINUITY | Search CONDUCTION+BAND+DISCONTINUITY |
| 8 | DECOMPOSITION SOURCE | 1 | 50% | 0% | 1 | Search DECOMPOSITION+SOURCE | Search DECOMPOSITION+SOURCE |
| 9 | ELECTRONIC SUBBAND | 1 | 50% | 0% | 1 | Search ELECTRONIC+SUBBAND | Search ELECTRONIC+SUBBAND |
| 10 | EPITAXIAL INP | 1 | 50% | 0% | 1 | Search EPITAXIAL+INP | Search EPITAXIAL+INP |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | GAINAS INP | 14 | 51% | 3% | 20 |
| 2 | SOLID PHOSPHORUS | 6 | 80% | 1% | 4 |
| 3 | INASP | 4 | 67% | 1% | 4 |
| 4 | INAS SURFACE | 4 | 75% | 0% | 3 |
| 5 | ALGAAS INGAAS GAAS | 3 | 57% | 1% | 4 |
| 6 | INASXP1 X | 3 | 57% | 1% | 4 |
| 7 | STRAINED SINGLE | 3 | 100% | 0% | 3 |
| 8 | HETEROINTERFACES | 3 | 17% | 2% | 18 |
| 9 | PHOSPHORUS SOURCE | 3 | 23% | 1% | 10 |
| 10 | GAINAS INP QUANTUM WELLS | 2 | 44% | 1% | 4 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications | 1997 | 11 | 97 | 13% |
| Interface simulation of strained and non-abrupt III-V quantum wells .1. Band profile calculation | 1996 | 6 | 144 | 18% |
| MOLECULAR-BEAM EPITAXY - SURFACE AND KINETIC EFFECTS | 1981 | 0 | 2 | 50% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | QUANTUM PHOTOVOLTA GRP | 2 | 67% | 0.3% | 2 |
| 2 | JOINT IL | 2 | 43% | 0.4% | 3 |
| 3 | SEZ PARMA | 1 | 21% | 0.4% | 3 |
| 4 | CPR 7 | 1 | 50% | 0.1% | 1 |
| 5 | EPSRC SEMICOND GROWTH IL | 1 | 50% | 0.1% | 1 |
| 6 | FDN CPQD | 1 | 50% | 0.1% | 1 |
| 7 | FRONTIER PROGRAM QUANTUM MAT | 1 | 50% | 0.1% | 1 |
| 8 | FUNDACAO PESQUISA DESENVOLVIMENTO TELECOMUN | 1 | 50% | 0.1% | 1 |
| 9 | GRP SF02 | 1 | 50% | 0.1% | 1 |
| 10 | ICT IONENTECH | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000243856 | INALAS INP//INALAS ALLOYS//INALAS ALASSB |
| 2 | 0.0000154280 | TRIMETHYLINDIUM//CHEMICAL BEAM EPITAXY CBE//MOLECULAR LAYER EPITAXY |
| 3 | 0.0000143676 | FAK PHYS CHEM//INDIUM SEGREGATION//IN DESORPTION |
| 4 | 0.0000135820 | QUANTUM WELL LASERS//ANTI GUIDING FACTOR//MULTIQUANTUM WELL LASERS |
| 5 | 0.0000116960 | GAINP//GAP INP SHORT PERIOD SUPERLATTICE//SEMICONDUCTING INDIUM GALLIUM PHOSPHIDE |
| 6 | 0.0000116215 | NEGATIVE EFFECTIVE MASS//GAASP QUANTUM WELLS//III V SEMICONDUCTOR HETEROJUNCTIONS |
| 7 | 0.0000110870 | REFLECTION MASS SPECTROMETRY//2D ISLAND//INTERFACE DISORDER |
| 8 | 0.0000106041 | SPATIAL OPTICAL MODULATOR//ASYMMETRIC COUPLED QUANTUM WELL//SELF ELECTROOPTIC EFFECT DEVICES |
| 9 | 0.0000104057 | SITE OCCUPATION PREFERENCES//ATOMIC LOCAL STRUCTURE//DAFNE L |
| 10 | 0.0000087862 | MISFIT DISLOCATIONS//GRADED BUFFER LAYER//DISLOCATION COMPENSATION |