Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
13042 | 800 | 19.6 | 50% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1792 | 5778 | DIFFUSION BARRIER//ELECTROMIGRATION//CU METALLIZATION |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | CVD W | Author keyword | 6 | 58% | 1% | 7 |
2 | FEATURE SCALE MODEL | Author keyword | 3 | 57% | 1% | 4 |
3 | FOCUS NEW YORK | Address | 2 | 25% | 1% | 8 |
4 | BLANKET TUNGSTEN | Author keyword | 2 | 67% | 0% | 2 |
5 | SINGLE WAFER REACTOR | Author keyword | 2 | 67% | 0% | 2 |
6 | BEREICH BAUELEMENTETECHNOL | Address | 2 | 50% | 0% | 3 |
7 | SOLID STATE ELE | Address | 2 | 22% | 1% | 6 |
8 | GEN PHYS LASER SPECT | Address | 1 | 38% | 0% | 3 |
9 | CVD IRON | Author keyword | 1 | 100% | 0% | 2 |
10 | EFFECTIVE REACTIVITY MAP | Author keyword | 1 | 100% | 0% | 2 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | CVD W | 6 | 58% | 1% | 7 | Search CVD+W | Search CVD+W |
2 | FEATURE SCALE MODEL | 3 | 57% | 1% | 4 | Search FEATURE+SCALE+MODEL | Search FEATURE+SCALE+MODEL |
3 | BLANKET TUNGSTEN | 2 | 67% | 0% | 2 | Search BLANKET+TUNGSTEN | Search BLANKET+TUNGSTEN |
4 | SINGLE WAFER REACTOR | 2 | 67% | 0% | 2 | Search SINGLE+WAFER+REACTOR | Search SINGLE+WAFER+REACTOR |
5 | CVD IRON | 1 | 100% | 0% | 2 | Search CVD+IRON | Search CVD+IRON |
6 | EFFECTIVE REACTIVITY MAP | 1 | 100% | 0% | 2 | Search EFFECTIVE+REACTIVITY+MAP | Search EFFECTIVE+REACTIVITY+MAP |
7 | REACTOR SCALE MODEL | 1 | 100% | 0% | 2 | Search REACTOR+SCALE+MODEL | Search REACTOR+SCALE+MODEL |
8 | SELECTIVITY LOSS | 1 | 50% | 0% | 2 | Search SELECTIVITY+LOSS | Search SELECTIVITY+LOSS |
9 | SEMICONDUCTOR PROCESS SIMULATION | 1 | 50% | 0% | 2 | Search SEMICONDUCTOR+PROCESS+SIMULATION | Search SEMICONDUCTOR+PROCESS+SIMULATION |
10 | SUBMICROMETER TRENCHES | 1 | 100% | 0% | 2 | Search SUBMICROMETER+TRENCHES | Search SUBMICROMETER+TRENCHES |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | WF6 | 30 | 54% | 5% | 38 |
2 | LPCVD TUNGSTEN | 21 | 78% | 2% | 14 |
3 | TUNGSTEN SILICIDE FILMS | 21 | 90% | 1% | 9 |
4 | STEP COVERAGE | 17 | 29% | 6% | 48 |
5 | SINGLE WAFER REACTOR | 11 | 44% | 2% | 19 |
6 | FEATURE SCALE | 11 | 100% | 1% | 6 |
7 | SILICON REDUCTION | 9 | 83% | 1% | 5 |
8 | TUNGSTEN LPCVD | 8 | 75% | 1% | 6 |
9 | RECTANGULAR TRENCHES | 7 | 46% | 1% | 11 |
10 | SELECTIVE TUNGSTEN | 6 | 80% | 1% | 4 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
METAL CVD FOR MICROELECTRONIC APPLICATIONS - AN EXAMINATION OF SURFACE-CHEMISTRY AND KINETICS | 1993 | 60 | 123 | 40% |
Electron spectroscopic analysis of the SiO2/Si system and correlation with metal-oxide-semiconductor device characteristics | 1996 | 245 | 99 | 10% |
CHEMICAL-VAPOR-DEPOSITION OF METALS .1. AN OVERVIEW OF CVD PROCESSES | 1995 | 99 | 130 | 18% |
Topography simulation for the virtual wafer fab | 2000 | 23 | 78 | 31% |
LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN AND ALUMINUM FOR VLSI APPLICATIONS | 1987 | 37 | 21 | 52% |
Multiscale modeling of thin film growth | 1998 | 40 | 49 | 12% |
SELECTIVE TUNGSTEN PROCESSING BY LOW-PRESSURE CVD | 1985 | 47 | 13 | 77% |
SELECTIVE VAPOR-PHASE DEPOSITION ON PATTERNED SUBSTRATES | 1990 | 28 | 133 | 29% |
CHEMICAL VAPOR-DEPOSITION OF METALS FOR INTEGRATED-CIRCUIT APPLICATIONS | 1985 | 42 | 28 | 46% |
A REVIEW OF LPCVD METALLIZATION FOR SEMICONDUCTOR-DEVICES | 1985 | 16 | 21 | 38% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | FOCUS NEW YORK | 2 | 25% | 1.0% | 8 |
2 | BEREICH BAUELEMENTETECHNOL | 2 | 50% | 0.4% | 3 |
3 | SOLID STATE ELE | 2 | 22% | 0.8% | 6 |
4 | GEN PHYS LASER SPECT | 1 | 38% | 0.4% | 3 |
5 | FOCUS NEW YORK RENSSELAER INTERCONNECT GIGASC | 1 | 100% | 0.3% | 2 |
6 | ANALYT MAT PHYS | 1 | 33% | 0.4% | 3 |
7 | DIRECT MET BUSINESS UNIT | 1 | 50% | 0.1% | 1 |
8 | FAB25 THIN FILM MODULE | 1 | 50% | 0.1% | 1 |
9 | LOW ENERGY LSI DEV PROJECT | 1 | 50% | 0.1% | 1 |
10 | TCAD MICROELECT | 1 | 50% | 0.1% | 1 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000261336 | TUNGSTEN NITRIDE//WNX//GRP MAT ENGN SUPERFICIES |
2 | 0.0000133474 | PARASITIC REACTION//CVD REACTOR//MOCVD REACTOR |
3 | 0.0000125717 | W TI THIN FILMS//WTI THIN FILMS//SURFACE LASER TREATMENT |
4 | 0.0000124653 | LASER MICRO CLADDING//FREEFORM FABRICAT S//DIMETHYLALUMINUM HYDRIDE |
5 | 0.0000112512 | BOROPHOSPHOSILICATE GLASS BPSG//ATMOSPHERIC PRESSURE CVD//BPSG |
6 | 0.0000104902 | TISI2//SALICIDE//NICKEL SILICIDE |
7 | 0.0000089611 | ELECTROCHEMICAL VAPOR DEPOSITION//BETA DIKETONE METAL CHELATES//COLD PLASMA PROCESS |
8 | 0.0000087593 | CROSS BRIDGE KELVIN RESISTOR CBKR//CROSS KELVIN RESISTOR CKR//CROSS BRIDGE KELVIN RESISTOR |
9 | 0.0000087103 | TINX FILMS//MAT CHEM COATINGS//TDEAT |
10 | 0.0000086826 | PERFLUORINATED CARBOXYLATES//COPPER CVD//IR AND NMR |