Class information for:
Level 1: CARBON DOPING//CBR4//C DOPED GAAS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
13030 801 17.8 72%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
260 18934 GAAS ON SI//GAAS SI//GAINP

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 CARBON DOPING Author keyword 8 19% 5% 38
2 CBR4 Author keyword 4 35% 1% 9
3 C DOPED GAAS Author keyword 2 67% 0% 2
4 HEAVILY CARBON DOPED GAAS Author keyword 2 67% 0% 2
5 METALORGANIC VPE Author keyword 2 67% 0% 2
6 CARBON TETRABROMIDE Author keyword 2 21% 1% 9
7 MOMBE Author keyword 2 11% 2% 13
8 C DOPING Author keyword 1 21% 1% 6
9 BERYLLIUM DIFFUSION Author keyword 1 50% 0% 2
10 CARBON DOPED GAAS Author keyword 1 100% 0% 2

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 CARBON DOPING 8 19% 5% 38 Search CARBON+DOPING Search CARBON+DOPING
2 CBR4 4 35% 1% 9 Search CBR4 Search CBR4
3 C DOPED GAAS 2 67% 0% 2 Search C+DOPED+GAAS Search C+DOPED+GAAS
4 HEAVILY CARBON DOPED GAAS 2 67% 0% 2 Search HEAVILY+CARBON+DOPED+GAAS Search HEAVILY+CARBON+DOPED+GAAS
5 METALORGANIC VPE 2 67% 0% 2 Search METALORGANIC+VPE Search METALORGANIC+VPE
6 CARBON TETRABROMIDE 2 21% 1% 9 Search CARBON+TETRABROMIDE Search CARBON+TETRABROMIDE
7 MOMBE 2 11% 2% 13 Search MOMBE Search MOMBE
8 C DOPING 1 21% 1% 6 Search C+DOPING Search C+DOPING
9 BERYLLIUM DIFFUSION 1 50% 0% 2 Search BERYLLIUM+DIFFUSION Search BERYLLIUM+DIFFUSION
10 CARBON DOPED GAAS 1 100% 0% 2 Search CARBON+DOPED+GAAS Search CARBON+DOPED+GAAS

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 P TYPE GAAS 47 36% 13% 104
2 CARBON DOPED GAAS 18 65% 2% 17
3 CURRENT INDUCED DEGRADATION 13 80% 1% 8
4 MOMBE 13 25% 5% 44
5 DOPED GAAS 11 16% 8% 63
6 GRAPHITE FILAMENT 9 83% 1% 5
7 TETRABROMIDE 8 45% 2% 13
8 CARBON HYDROGEN PAIRS 6 71% 1% 5
9 DOPED BASE 6 50% 1% 9
10 BASE LAYER 6 100% 0% 4

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
A comparative study of GaAs- and InP-based HBT growth by means of LP-MOVPE using conventional and non gaseous sources 2000 12 61 41%
Carbon-impurity incorporation during the growth of epitaxial group Ill-V materials 1996 8 103 53%
Structures, energetics and electronic properties of complex III-V semiconductor systems 2000 31 89 18%
Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors 1999 3 7 57%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 FEMTON 1 100% 0.2% 2
2 LIGHTING MODULE DEV 1 33% 0.4% 3
3 CPD SEMICOND MICROELECT 1 50% 0.1% 1
4 CEMD 1 25% 0.2% 2
5 ARCHITECTURE ENVIRONM LIFE SCI 1 22% 0.2% 2
6 ENGN OPTOELECT DEVICE 0 33% 0.1% 1
7 UMR 5818IXL 0 33% 0.1% 1
8 ESTUDOS TELECOMUN 0 18% 0.2% 2
9 UNITE RECH HETEROEPITAXIE PLICAT 0 18% 0.2% 2
10 DIPARTIMENTO INFORMAZ 0 25% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000232954 HETEROJUNCTION BIPOLAR TRANSISTORS//HETEROJUNCTION BIPOLAR TRANSISTOR//HBT
2 0.0000221170 TRIMETHYLINDIUM//CHEMICAL BEAM EPITAXY CBE//MOLECULAR LAYER EPITAXY
3 0.0000123109 TRANSISTOR LASER//TRANSISTOR LASER TL//MICRONANOSYST TECHNOL
4 0.0000097523 OVAL DEFECTS//SEEIE//GA AS BI SOLUTION
5 0.0000092185 QUANTUM WELL INTERMIXING//QUANTUM WELL INTERDIFFUSION//IMPURITY FREE DISORDERING
6 0.0000084198 HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN IN SI
7 0.0000083539 LATERAL P N JUNCTION//411A GAAS SUBSTRATES//411A
8 0.0000080981 MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS
9 0.0000070456 PHOTON RECYCLING//SEMICONDUCTOR SCINTILLATORS//FSF
10 0.0000068783 DELTA DOPING//SELF CONSISTENTLY//DELTA DOPED QUANTUM WELLS