Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 12930 | 808 | 18.2 | 40% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 993 | 9970 | THIN FILM TRANSISTOR//THIN FILM TRANSISTORS TFTS//THIN FILM TRANSISTOR TFT |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | POLYSILICON RESISTORS | Author keyword | 2 | 50% | 0% | 3 |
| 2 | HEAVILY DOPED POLYSILICON RESISTOR | Author keyword | 1 | 100% | 0% | 2 |
| 3 | LPCVD SI LAYERS | Author keyword | 1 | 100% | 0% | 2 |
| 4 | MELTING SEGREGATION MODEL | Author keyword | 1 | 100% | 0% | 2 |
| 5 | PADEOX | Author keyword | 1 | 50% | 0% | 2 |
| 6 | SILICON COATINGS | Author keyword | 1 | 50% | 0% | 2 |
| 7 | SCHOTTKY BARRIER DIODES SBDS | Author keyword | 1 | 25% | 0% | 3 |
| 8 | ATOMIC HYDROGEN DIFFUSION | Author keyword | 1 | 50% | 0% | 1 |
| 9 | COMPENSATION DOPING | Author keyword | 1 | 50% | 0% | 1 |
| 10 | CURRENT INDUCED RECRYSTALLIZATION | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | GRAIN BOUNDARY RECOMBINATION | 12 | 86% | 1% | 6 |
| 2 | DIFFUSED GUARD RING | 11 | 100% | 1% | 6 |
| 3 | OPTICAL ILLUMINATION | 7 | 53% | 1% | 9 |
| 4 | POLYCRYSTALLINE SILICON RESISTORS | 6 | 80% | 0% | 4 |
| 5 | CRYSTALLINE SEMICONDUCTOR SYSTEM | 4 | 75% | 0% | 3 |
| 6 | DRIFT DIFFUSION APPROACH | 4 | 75% | 0% | 3 |
| 7 | DOPED POLYSILICON RESISTORS | 3 | 100% | 0% | 3 |
| 8 | EFFECTIVE DIFFUSION LENGTH | 1 | 50% | 0% | 2 |
| 9 | ARSENIC SEGREGATION | 1 | 50% | 0% | 1 |
| 10 | BARRIER PHOTOCONDUCTING DEVICES | 1 | 50% | 0% | 1 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| CARRIER TRANSPORT AT GRAIN-BOUNDARIES IN SEMICONDUCTORS | 1984 | 93 | 30 | 63% |
| Predicted electronic properties of polycrystalline silicon from three-dimensional device modeling combined with defect-pool model | 2002 | 17 | 108 | 26% |
| GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON | 1985 | 59 | 19 | 53% |
| BIBLIOGRAPHY OF SELECTED PAPERS ON POLYCRYSTALLINE SILICON | 1985 | 0 | 200 | 39% |
| REVIEW OF RESEARCH ON POLYCRYSTALLINE SILICON SOLAR-CELLS | 1983 | 1 | 9 | 56% |
| PROGRESS IN PHOTO-VOLTAIC ENERGY-CONVERSION | 1982 | 1 | 25 | 20% |
| PHOTO-VOLTAIC MATERIALS AND DEVICES FOR TERRESTRIAL SOLAR-ENERGY APPLICATIONS | 1980 | 17 | 5 | 20% |
| THE HALL-EFFECT IN POLYCRYSTALLINE AND POWDERED SEMICONDUCTORS | 1980 | 301 | 5 | 40% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | IST CHIM TECNOL MAT COMPONENTI ELETTR | 1 | 50% | 0.1% | 1 |
| 2 | MICROELECT DEVICE CHARACTERIZAT DESIGN | 1 | 50% | 0.1% | 1 |
| 3 | PHOTON MICROSYST | 1 | 50% | 0.1% | 1 |
| 4 | SOLID STATE DEVICE BRANCH | 1 | 50% | 0.1% | 1 |
| 5 | UNIT ADV CONTROL ENERGY MANAGEMENT | 1 | 50% | 0.1% | 1 |
| 6 | SEMICOND ENERGIE SOLAIRE | 0 | 20% | 0.2% | 2 |
| 7 | DEBYE NANOMAT SCI CONDENSED MATTER INTERFA | 0 | 33% | 0.1% | 1 |
| 8 | FSEC | 0 | 33% | 0.1% | 1 |
| 9 | PV ENGN | 0 | 33% | 0.1% | 1 |
| 10 | MICROSTRUCT TECHNOL ANAL | 0 | 25% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000182272 | PASSIVATED CONTACT//POLYSILICON EMITTER//CLOCK ACCESS TIME |
| 2 | 0.0000159980 | POLY SI TFT//POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS POLY SI TFTS//JOINT SCI TECHNOL |
| 3 | 0.0000155175 | DIFFUSION TEMPERATURE//DEVICE FUNCT SECT//TWO DIMENSIONAL DEVICE SIMULATION |
| 4 | 0.0000128611 | POLY SIGE//POLY SI1 XGEX//POLYCRYSTALLINE SILICON GERMANIUM |
| 5 | 0.0000121671 | POLYOXIDE//INTERPOLY OXIDE//NONPLANAR POLYOXIDE |
| 6 | 0.0000115861 | SIPOS//MSOS O P STRUCTURE//SEMI INSULATING POLYCRYSTALLINE SILICON |
| 7 | 0.0000112591 | ELECTRON BEAM INDUCED CURRENT//ELECTRON BEAM APPLICATION//SEMICONDUCTOR MATERIAL MEASUREMENTS |
| 8 | 0.0000107881 | SOLAR CELL TEST//6224//POLY SILICON FILM |
| 9 | 0.0000101077 | METAL INDUCED CRYSTALLIZATION//SOLID PHASE CRYSTALLIZATION//METAL INDUCED LATERAL CRYSTALLIZATION |
| 10 | 0.0000099941 | ANTIFUSE//SOURCE GATED TRANSISTOR SGT//MULTITIME PROGRAMMABLE MTP |