Class information for:
Level 1: DIRECT TUNNELING//QUANTUM MECHANICAL EFFECTS QMES//WAVE FUNCTION PENETRATION

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
12737 821 16.7 57%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
138 22619 IEEE TRANSACTIONS ON ELECTRON DEVICES//IEEE ELECTRON DEVICE LETTERS//SOLID-STATE ELECTRONICS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 DIRECT TUNNELING Author keyword 10 28% 4% 29
2 QUANTUM MECHANICAL EFFECTS QMES Author keyword 8 100% 1% 5
3 WAVE FUNCTION PENETRATION Author keyword 8 62% 1% 8
4 DIRECT TUNNELING CURRENT Author keyword 7 64% 1% 7
5 LEHRSTUHL HALBLEITERTECH Address 7 53% 1% 9
6 QUANTUM MECHANICAL EFFECTS Author keyword 6 29% 2% 19
7 MOS TUNNEL DIODE Author keyword 6 80% 0% 4
8 MOS TUNNEL STRUCTURE Author keyword 6 80% 0% 4
9 QUANTUM MECHANICAL EFFECT Author keyword 6 44% 1% 11
10 DIRECT TUNNELING DT Author keyword 6 71% 1% 5

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 DIRECT TUNNELING 10 28% 4% 29 Search DIRECT+TUNNELING Search DIRECT+TUNNELING
2 QUANTUM MECHANICAL EFFECTS QMES 8 100% 1% 5 Search QUANTUM+MECHANICAL+EFFECTS+QMES Search QUANTUM+MECHANICAL+EFFECTS+QMES
3 WAVE FUNCTION PENETRATION 8 62% 1% 8 Search WAVE+FUNCTION+PENETRATION Search WAVE+FUNCTION+PENETRATION
4 DIRECT TUNNELING CURRENT 7 64% 1% 7 Search DIRECT+TUNNELING+CURRENT Search DIRECT+TUNNELING+CURRENT
5 QUANTUM MECHANICAL EFFECTS 6 29% 2% 19 Search QUANTUM+MECHANICAL+EFFECTS Search QUANTUM+MECHANICAL+EFFECTS
6 MOS TUNNEL DIODE 6 80% 0% 4 Search MOS+TUNNEL+DIODE Search MOS+TUNNEL+DIODE
7 MOS TUNNEL STRUCTURE 6 80% 0% 4 Search MOS+TUNNEL+STRUCTURE Search MOS+TUNNEL+STRUCTURE
8 QUANTUM MECHANICAL EFFECT 6 44% 1% 11 Search QUANTUM+MECHANICAL+EFFECT Search QUANTUM+MECHANICAL+EFFECT
9 DIRECT TUNNELING DT 6 71% 1% 5 Search DIRECT+TUNNELING+DT Search DIRECT+TUNNELING+DT
10 GATE TUNNELING CURRENT 5 45% 1% 9 Search GATE+TUNNELING+CURRENT Search GATE+TUNNELING+CURRENT

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ULTRA THIN OXIDE 25 71% 2% 20
2 DIRECT TUNNELING CURRENT 10 44% 2% 18
3 WAVE FUNCTION PENETRATION 9 64% 1% 9
4 POLYSILICON QUANTIZATION 9 83% 1% 5
5 EMITTER TRANSISTORS 6 80% 0% 4
6 INVERSION LAYER 6 16% 4% 33
7 SIO2 GATE OXIDES 5 50% 1% 7
8 THIN OXIDE 5 29% 2% 14
9 TUNNELING CURRENT 4 15% 3% 26
10 EMITTER TRANSISTOR 4 75% 0% 3

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
Extrinsic and Intrinsic Frequency Dispersion of High-k Materials in Capacitance-Voltage Measurements 2012 12 51 37%
Tunneling through ultrathin SiO2 gate oxides from microscopic models 2001 72 63 29%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 LEHRSTUHL HALBLEITERTECH 7 53% 1.1% 9
2 LASSIDTI 4 75% 0.4% 3
3 CPR ND 3 60% 0.4% 3
4 SI NANO DEVICE 2 67% 0.2% 2
5 ELEKT BAUELEMENTE ALTUNGSTECH 1 38% 0.4% 3
6 LEHRSTUHL HALBLEITERTECHN 1 50% 0.2% 2
7 NETZWERKTHEORIE ALTUNGSTECH 1 100% 0.2% 2
8 INTEGRATED CIRCUITS 1 11% 1.3% 11
9 FIS DISPOSITIVOS MICROELECT 1 40% 0.2% 2
10 ADV MEMORY DEVICE TECHNOL 1 50% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000197716 STRESS INDUCED LEAKAGE CURRENT//SOFT BREAKDOWN//DIELECTRIC BREAKDOWN BD
2 0.0000194575 CONFOCAL SYSTEMS//MICROWAVE PHOTOCONDUCTIVITY//MIS SWITCHING DEVICES
3 0.0000183314 MOS TUNNELING DIODE//ELECTRON HOLE PLASMA RECOMBINATION//LATERAL NONUNIFORMITY LNU
4 0.0000173656 NETWORK COMPUTAT NANOTECHNOL//QUASI BALLISTIC TRANSPORT//JOURNAL OF COMPUTATIONAL ELECTRONICS
5 0.0000122238 CRYOGENIC CMOS//LOW TEMPERATURE ELECTRONICS//LOW TEMPERATURE CIRCUIT
6 0.0000113200 DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS
7 0.0000103896 BORON PENETRATION//REMOTE PLASMA NITRIDATION RPN//SI NITRIDE
8 0.0000100135 HFO2//HIGH K//METAL GATE
9 0.0000100038 DEVICE MODELLING GRP//RANDOM DOPANT//DEVICE MODELING GRP
10 0.0000086921 NONQUASI STATIC NQS EFFECT//QUCS//RSCE