Class information for:
Level 1: ECR PLASMA//UNIFORM PLASMA//MAGNETIC MULTIPOLE FIELD

Basic class information

ID Publications Average number
of references
Avg. shr. active
ref. in WoS
12268 854 15.5 55%



Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)



ID, lev.
above
Publications Label for level above
512 14399 PLASMA SOURCES SCIENCE & TECHNOLOGY//PLASMA DISPLAY PANEL PDP//PLASMA DISPLAY PANEL

Terms with highest relevance score



Rank Term Type of term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 ECR PLASMA Author keyword 25 31% 8% 67
2 UNIFORM PLASMA Author keyword 7 64% 1% 7
3 MAGNETIC MULTIPOLE FIELD Author keyword 6 80% 0% 4
4 ELECTRON CYCLOTRON RESONANCE DISCHARGE Author keyword 6 71% 1% 5
5 ECR POSITION Author keyword 6 100% 0% 4
6 UPPER HYBRID RESONANCE Author keyword 5 60% 1% 6
7 LOW ELECTRON TEMPERATURE PLASMA Author keyword 5 63% 1% 5
8 ELECTRON CYCLOTRON WAVE Author keyword 4 46% 1% 6
9 AR N 2 MIXTURE Author keyword 3 100% 0% 3
10 ELECTRON IMPACT CROSS SECTION Author keyword 3 100% 0% 3

Web of Science journal categories

Author Key Words



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
LCSH search Wikipedia search
1 ECR PLASMA 25 31% 8% 67 Search ECR+PLASMA Search ECR+PLASMA
2 UNIFORM PLASMA 7 64% 1% 7 Search UNIFORM+PLASMA Search UNIFORM+PLASMA
3 MAGNETIC MULTIPOLE FIELD 6 80% 0% 4 Search MAGNETIC+MULTIPOLE+FIELD Search MAGNETIC+MULTIPOLE+FIELD
4 ELECTRON CYCLOTRON RESONANCE DISCHARGE 6 71% 1% 5 Search ELECTRON+CYCLOTRON+RESONANCE+DISCHARGE Search ELECTRON+CYCLOTRON+RESONANCE+DISCHARGE
5 ECR POSITION 6 100% 0% 4 Search ECR+POSITION Search ECR+POSITION
6 UPPER HYBRID RESONANCE 5 60% 1% 6 Search UPPER+HYBRID+RESONANCE Search UPPER+HYBRID+RESONANCE
7 LOW ELECTRON TEMPERATURE PLASMA 5 63% 1% 5 Search LOW+ELECTRON+TEMPERATURE+PLASMA Search LOW+ELECTRON+TEMPERATURE+PLASMA
8 ELECTRON CYCLOTRON WAVE 4 46% 1% 6 Search ELECTRON+CYCLOTRON+WAVE Search ELECTRON+CYCLOTRON+WAVE
9 AR N 2 MIXTURE 3 100% 0% 3 Search AR+N+2+MIXTURE Search AR+N+2+MIXTURE
10 ELECTRON IMPACT CROSS SECTION 3 100% 0% 3 Search ELECTRON+IMPACT+CROSS+SECTION Search ELECTRON+IMPACT+CROSS+SECTION

Key Words Plus



Rank Web of Science journal category Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ. in
class
1 ECR ION 18 89% 1% 8
2 TE01 MODE MICROWAVE 6 100% 0% 4
3 ELECTRON CYCLOTRON RESONANCE 5 14% 4% 36
4 ADVANCED PLASMA SOURCES 4 75% 0% 3
5 ETCHING APPLICATIONS 4 75% 0% 3
6 ECR PLASMA 3 27% 1% 11
7 MICROWAVE PLASMA CATHODE 3 100% 0% 3
8 MICROWAVE ION SOURCE 3 42% 1% 5
9 MODE MICROWAVE 2 67% 0% 2
10 ECR ION SOURCE 2 23% 1% 6

Journals

Reviews



Title Publ. year Cit. Active
references
% act. ref.
to same field
The design and application of electron cyclotron resonance discharges 1997 30 78 63%
PHYSICAL LIMITATIONS OF MINIMUM SIZES OF THE ELEMENTS OF MODERN MICROELECTRONICS 1984 10 5 20%

Address terms



Rank Address term Relevance score
(tfidf)
Class's shr.
of term's tot.
occurrences
Shr. of publ.
in class containing
term
Num. of
publ.
in class
1 KASADO WORKS 1 27% 0.4% 3
2 ELECT COMP ENGN 1406 W GREEN ST 1 50% 0.1% 1
3 KASADO DESIGN PROD 1 50% 0.1% 1
4 SCI PL MECH ELE ODYNAM 1 50% 0.1% 1
5 CALCULAT MATH CYBERNET 0 33% 0.1% 1
6 ELE OSTAT MAT DIELE 0 33% 0.1% 1
7 ACELERADOR TANDEM 0 25% 0.1% 1
8 VLSI MFG ENGN 0 25% 0.1% 1
9 STATE MAT MODIFICAT ELECT ION LASER BEA 0 17% 0.1% 1
10 PLASMA CONVERS ENERGY 0 14% 0.1% 1

Related classes at same level (level 1)



Rank Relatedness score Related classes
1 0.0000136847 ELECTRON CYCLOTRON RESONANCE ION SOURCE//ECR ION SOURCE//ECRIS
2 0.0000131642 SURFACE WAVE PLASMA//GRP ESPE OSCOPIA PLASMAS//GRP PHYS PLASMAS
3 0.0000123660 LOW INDUCTANCE ANTENNA//LOW DAMAGE PROCESS//INDUCTIVELY COUPLED PLASMA
4 0.0000117819 SPACE PLASMA POWER PROP GRP//SPACE PLASMA POWER PROP//HELICON WAVE
5 0.0000095284 ELECT DEVICES MAT TECHNOL//SIO2 ETCHING//PLASMA ETCHING
6 0.0000083525 DOUBLE PLASMA DEVICE//MULTIPLE DOUBLE LAYERS//GRID BIAS METHOD
7 0.0000083193 CHEMICAL DRY ETCHING//PLASMA NANOTECHNOL PLANT//AFTER CORROSION
8 0.0000079160 ELECTRON PLASMA OSCILLATION//RAMAN REGIME//TEMPAKU
9 0.0000075678 PLASMA CONFINEMENT SPATIALLY PERIODIC FIELD//MAGNETIC CUSP//MECH SYST ENGN COURSE
10 0.0000071691 SIH2//SIH3//SILANE PLASMA