Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
1211 | 2689 | 22.1 | 68% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
1415 | 7520 | GE2SB2TE5//PHASE CHANGE MEMORY PCM//OPTICAL DISK |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | GE2SB2TE5 | Author keyword | 163 | 80% | 4% | 101 |
2 | PHASE CHANGE MEMORY PCM | Author keyword | 117 | 77% | 3% | 80 |
3 | PHASE CHANGE MEMORY | Author keyword | 108 | 49% | 6% | 161 |
4 | PHASE CHANGE MEMORIES | Author keyword | 104 | 84% | 2% | 57 |
5 | GE SB TE | Author keyword | 71 | 84% | 1% | 38 |
6 | PHASE CHANGE RANDOM ACCESS MEMORY | Author keyword | 44 | 88% | 1% | 21 |
7 | ANTIMONY COMPOUNDS | Author keyword | 42 | 54% | 2% | 54 |
8 | IBM MACRONIX PCRAM JOINT PROJECT | Address | 41 | 100% | 1% | 15 |
9 | STATE FUNCT MAT INFORMAT | Address | 31 | 14% | 7% | 201 |
10 | SHANGHAI MICROSYST INFORMAT TECHNOL | Address | 30 | 10% | 10% | 268 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | GE2SB2TE5 | 163 | 80% | 4% | 101 | Search GE2SB2TE5 | Search GE2SB2TE5 |
2 | PHASE CHANGE MEMORY PCM | 117 | 77% | 3% | 80 | Search PHASE+CHANGE+MEMORY+PCM | Search PHASE+CHANGE+MEMORY+PCM |
3 | PHASE CHANGE MEMORY | 108 | 49% | 6% | 161 | Search PHASE+CHANGE+MEMORY | Search PHASE+CHANGE+MEMORY |
4 | PHASE CHANGE MEMORIES | 104 | 84% | 2% | 57 | Search PHASE+CHANGE+MEMORIES | Search PHASE+CHANGE+MEMORIES |
5 | GE SB TE | 71 | 84% | 1% | 38 | Search GE+SB+TE | Search GE+SB+TE |
6 | PHASE CHANGE RANDOM ACCESS MEMORY | 44 | 88% | 1% | 21 | Search PHASE+CHANGE+RANDOM+ACCESS+MEMORY | Search PHASE+CHANGE+RANDOM+ACCESS+MEMORY |
7 | ANTIMONY COMPOUNDS | 42 | 54% | 2% | 54 | Search ANTIMONY+COMPOUNDS | Search ANTIMONY+COMPOUNDS |
8 | PHASE CHANGE MATERIALS | 29 | 12% | 9% | 230 | Search PHASE+CHANGE+MATERIALS | Search PHASE+CHANGE+MATERIALS |
9 | GERMANIUM COMPOUNDS | 27 | 34% | 2% | 65 | Search GERMANIUM+COMPOUNDS | Search GERMANIUM+COMPOUNDS |
10 | GE2SB2TE5 GST | 25 | 73% | 1% | 19 | Search GE2SB2TE5+GST | Search GE2SB2TE5+GST |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | GE2SB2TE5 | 470 | 84% | 10% | 260 |
2 | GE2SB2TE5 FILMS | 234 | 84% | 5% | 127 |
3 | CHANGE MEMORY | 193 | 83% | 4% | 110 |
4 | CHANGE MEMORIES | 65 | 90% | 1% | 28 |
5 | CHANGE MEDIA | 58 | 88% | 1% | 28 |
6 | GETE | 56 | 52% | 3% | 77 |
7 | RANDOM ACCESS MEMORY | 52 | 29% | 6% | 154 |
8 | LASER INDUCED CRYSTALLIZATION | 52 | 58% | 2% | 59 |
9 | NONVOLATILE | 46 | 43% | 3% | 82 |
10 | GESBTE | 45 | 94% | 1% | 16 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Phase-change materials for rewriteable data storage | 2007 | 857 | 48 | 79% |
Impact of vacancy ordering on thermal transport in crystalline phase-change materials | 2015 | 4 | 54 | 54% |
Phase change memory technology | 2010 | 198 | 132 | 84% |
Phase Change Materials and Their Application to Nonvolatile Memories | 2010 | 176 | 113 | 73% |
Design Rules for Phase-Change Materials in Data Storage Applications | 2011 | 98 | 191 | 80% |
Phase Change Materials: Challenges on the Path to a Universal Storage Device | 2012 | 30 | 68 | 84% |
Phase Change Materials | 2009 | 64 | 62 | 82% |
Threshold switching and phase transition numerical models for phase change memory simulations | 2008 | 81 | 44 | 89% |
Reversible switching in phase-change materials | 2008 | 64 | 49 | 84% |
The Science and Technology of Phase Change Materials | 2012 | 11 | 39 | 87% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | IBM MACRONIX PCRAM JOINT PROJECT | 41 | 100% | 0.6% | 15 |
2 | STATE FUNCT MAT INFORMAT | 31 | 14% | 7.5% | 201 |
3 | SHANGHAI MICROSYST INFORMAT TECHNOL | 30 | 10% | 10% | 268 |
4 | SHANGHAI NANOFABRICAT TECHNOL MEMORY | 24 | 91% | 0.4% | 10 |
5 | STATE FUNCT MAT INFORMAT NANOTECHNOL LA | 21 | 90% | 0.3% | 9 |
6 | PHYS IA 1 | 18 | 49% | 1.0% | 27 |
7 | FUNCT SEMICOND FILM ENGN TECHNOL | 14 | 57% | 0.6% | 16 |
8 | SEMICOND MAT DEVICES | 13 | 36% | 1.0% | 28 |
9 | MAT SCI ANAL TECHNOL | 11 | 67% | 0.4% | 10 |
10 | MACRONIX EMERGING CENT | 11 | 78% | 0.3% | 7 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000122753 | SUPER RENS//SUPER RESOLUTION NEAR FIELD STRUCTURE//MASTERING |
2 | 0.0000090680 | AZO AZOMETHINE//AZODERIVATIVES OF BETA DIKETONES//ARYLHYDRAZONES OF BETA DIKETONES |
3 | 0.0000073291 | CHALCOGENIDE GLASSES//GLASS CRYSTAL TRANSFORMATION//CHALCOGENIDES |
4 | 0.0000059416 | JOSEPHSON HARMONIC GENERATION//OPEN DIELECTRIC RESONATOR//PERFLUORINATED MATERIALS |
5 | 0.0000042883 | OPT MEMORY ENGN//LAND GROOVE RECORDING//DIGITAL VERSATILE DISC |
6 | 0.0000042402 | CHARLES GERHARDT ICG//CNRS URA 176//STRUCTURE OF DISORDERED ALLOYS |
7 | 0.0000042260 | OPTICAL INFORMATION SYSTEMS//MINI-MICRO SYSTEMS//OPTODEVICE |
8 | 0.0000033179 | LPCA//GESE2//GCR |
9 | 0.0000030366 | PHOTOEXPANSION//AMORPHOUS CHALCOGENIDES//CHALCOGENIDE GLASSES |
10 | 0.0000029375 | CRYSTALS OF TETRADYMITE STRUCTURE//HALL AND SEEBECK COEFFICIENTS//BISMUTH TELLURIDE BASED FILMS |