Class information for:
Level 1: SIMOX//BURIED OXIDE LAYER//CONTACTLESS I V METHOD

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
12001 874 16.5 51%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
372 16511 SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SIMOX Author keyword 12 22% 5% 47
2 BURIED OXIDE LAYER Author keyword 3 43% 1% 6
3 CONTACTLESS I V METHOD Author keyword 3 100% 0% 3
4 HF DEFECT Author keyword 2 67% 0% 2
5 BURIED OXIDE Author keyword 2 21% 1% 9
6 SELF IMPLANTATION Author keyword 1 38% 0% 3
7 ELECT COMMUN S ATSUGI S Address 1 100% 0% 2
8 ELECTRON HOLE DROPLET Author keyword 1 50% 0% 2
9 INTERNAL THERMAL OXIDATION Author keyword 1 100% 0% 2
10 SEPARATION BY IMPLANTED OXYGEN MATERIALS Author keyword 1 100% 0% 2

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 SIMOX 12 22% 5% 47 Search SIMOX Search SIMOX
2 BURIED OXIDE LAYER 3 43% 1% 6 Search BURIED+OXIDE+LAYER Search BURIED+OXIDE+LAYER
3 CONTACTLESS I V METHOD 3 100% 0% 3 Search CONTACTLESS+I+V+METHOD Search CONTACTLESS+I+V+METHOD
4 HF DEFECT 2 67% 0% 2 Search HF+DEFECT Search HF+DEFECT
5 BURIED OXIDE 2 21% 1% 9 Search BURIED+OXIDE Search BURIED+OXIDE
6 SELF IMPLANTATION 1 38% 0% 3 Search SELF+IMPLANTATION Search SELF+IMPLANTATION
7 ELECTRON HOLE DROPLET 1 50% 0% 2 Search ELECTRON+HOLE+DROPLET Search ELECTRON+HOLE+DROPLET
8 INTERNAL THERMAL OXIDATION 1 100% 0% 2 Search INTERNAL+THERMAL+OXIDATION Search INTERNAL+THERMAL+OXIDATION
9 SEPARATION BY IMPLANTED OXYGEN MATERIALS 1 100% 0% 2 Search SEPARATION+BY+IMPLANTED+OXYGEN+MATERIALS Search SEPARATION+BY+IMPLANTED+OXYGEN+MATERIALS
10 SI O 1 50% 0% 2 Search SI++O Search SI++O

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 OXYGEN IMPLANTATION 24 49% 4% 36
2 BURIED SIO2 LAYERS 15 88% 1% 7
3 OXYGEN IMPLANTED SILICON 15 88% 1% 7
4 SIMOX 11 28% 4% 34
5 HIGH DOSE IMPLANTATION 9 64% 1% 9
6 SIMOX WAFERS 9 64% 1% 9
7 LOW DOSE SEPARATION 9 67% 1% 8
8 BURIED OXIDE 9 35% 2% 20
9 ON INSULATOR MATERIAL 8 75% 1% 6
10 BURIED OXIDE LAYERS 7 64% 1% 7

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
A REVIEW OF THE ELECTRICAL-PROPERTIES OF SIMOX SUBSTRATES AND THEIR IMPACT ON DEVICE PERFORMANCE 1991 25 23 39%
SYNTHESIS OF BURIED INSULATING LAYERS IN SILICON BY ION-IMPLANTATION 1992 1 89 79%
Carbon-mediated effects in silicon and in silicon-related materials 1996 16 181 10%
SUBSTRATES - THE MATERIAL BASES OF MICROELECTRONICS AND NANOELECTRONICS 1993 2 37 27%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 ELECT COMMUN S ATSUGI S 1 100% 0.2% 2
2 SILICONE SYST S 1 50% 0.1% 1
3 SIMOX GRP 1 50% 0.1% 1
4 ULTRA LSI 1 50% 0.1% 1
5 CC LSI DEV 1 22% 0.2% 2
6 ELECT ELE ON COMP ENGN 0 33% 0.1% 1
7 PETRO PHYS GRP 0 25% 0.1% 1
8 ISOBE RD 0 13% 0.2% 2
9 FWIM 0 14% 0.1% 1
10 CHEM TECH ANALYT GETREIDEMKT 0 100% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000190821 ELECTRON BEAM ANNEALING//RAFTER//ION BEAM SYNTHESIS IBS
2 0.0000131788 ION CUT//SURFACE BLISTERING//SMART CUT
3 0.0000090937 OXIDE TRAPPED CHARGE//ELDRS//TOTAL IONIZING DOSE
4 0.0000087953 FARADAY COLLECTOR//MAGNETIC ANALYZER//IMAGE WIDTH
5 0.0000087840 EPITAXIAL AL2O3//AL2O3 ON SI//DENVER AEROSP TECH OPERAT
6 0.0000076568 ZONE MELTING RECRYSTALLIZATION//ARCHITECTURE TECH//LASER INDUCED TEMPERATURE RISE
7 0.0000074161 OXYGEN PRECIPITATION//GROWN IN DEFECT//CZOCHRALSKI SILICON
8 0.0000067149 CAPACITORLESS DRAM//1T DRAM//CAPACITORLESS 1T DRAM
9 0.0000059530 NANOOPT PROPERTY//PLASMA PHYS PLASMA SOURCES//NON UNIFORM THIN FILMS
10 0.0000059213 IBIEC//SOLID PHASE EPITAXIAL GROWTH//LATERAL SOLID PHASE EPITAXY