Class information for:
Level 1: ION CUT//SURFACE BLISTERING//SMART CUT

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
11640 901 18.7 72%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
372 16511 SWAMP//OXYGEN PRECIPITATION//GROWN IN DEFECT

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ION CUT Author keyword 18 59% 2% 20
2 SURFACE BLISTERING Author keyword 15 88% 1% 7
3 SMART CUT Author keyword 12 47% 2% 18
4 GETTERING Author keyword 9 16% 6% 51
5 HYDROGEN IMPLANTATION Author keyword 8 33% 2% 21
6 LOW DIMENS NANOSTRUCT Address 6 80% 0% 4
7 SI HE Author keyword 6 80% 0% 4
8 ION CUTTING Author keyword 6 71% 1% 5
9 HE AND H ION IMPLANTATION Author keyword 6 100% 0% 4
10 HELIUM IMPLANTATION Author keyword 5 29% 2% 15

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 ION CUT 18 59% 2% 20 Search ION+CUT Search ION+CUT
2 SURFACE BLISTERING 15 88% 1% 7 Search SURFACE+BLISTERING Search SURFACE+BLISTERING
3 SMART CUT 12 47% 2% 18 Search SMART+CUT Search SMART+CUT
4 GETTERING 9 16% 6% 51 Search GETTERING Search GETTERING
5 HYDROGEN IMPLANTATION 8 33% 2% 21 Search HYDROGEN+IMPLANTATION Search HYDROGEN+IMPLANTATION
6 SI HE 6 80% 0% 4 Search SI++HE Search SI++HE
7 ION CUTTING 6 71% 1% 5 Search ION+CUTTING Search ION+CUTTING
8 HE AND H ION IMPLANTATION 6 100% 0% 4 Search HE+AND+H+ION+IMPLANTATION Search HE+AND+H+ION+IMPLANTATION
9 HELIUM IMPLANTATION 5 29% 2% 15 Search HELIUM+IMPLANTATION Search HELIUM+IMPLANTATION
10 SMART CUT TECHNOLOGY 4 75% 0% 3 Search SMART+CUT+TECHNOLOGY Search SMART+CUT+TECHNOLOGY

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 INDUCED EXFOLIATION 33 83% 2% 19
2 INSULATOR MATERIAL TECHNOLOGY 28 52% 4% 38
3 HELIUM IMPLANTED SILICON 21 90% 1% 9
4 HELIUM DESORPTION 15 82% 1% 9
5 INDUCED CAVITIES 15 73% 1% 11
6 HE IMPLANTATION 12 40% 3% 23
7 SMART CUTR PROCESS 11 57% 1% 13
8 HYDROGEN INDUCED EXFOLIATION 11 78% 1% 7
9 R P 2 11 78% 1% 7
10 COIMPLANTATION 10 35% 3% 23

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Hydrogen blistering of silicon: Progress in fundamental understanding 2007 59 110 65%
Heterogeneous Integration of Compound Semiconductors 2010 33 126 30%
Hydrogen and helium bubbles in silicon 2000 105 76 43%
Development of ion-beam nano-structuring techniques in KIGAM 2008 4 23 52%
Voids and Nanocavities in Silicon 2010 2 45 56%
Quantitative HRTEM investigation of nanoplatelets 2010 2 24 29%
HYDROGEN PRECIPITATION IN HIGHLY OVERSATURATED SINGLE-CRYSTALLINE SILICON 1995 20 85 18%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 LOW DIMENS NANOSTRUCT 6 80% 0.4% 4
2 GRP NMAT 3 57% 0.4% 4
3 UMR6630 3 27% 1.0% 9
4 ANALOG MIXED SIGNAL TECHNOL 2 44% 0.4% 4
5 DEVICE PERFORMANCE 2 67% 0.2% 2
6 LTFC 2 67% 0.2% 2
7 CERI 2 11% 1.9% 17
8 FAK MIPA 2 24% 0.7% 6
9 ION BEAM PL GRP 1 100% 0.2% 2
10 WAFER BONDING 1 33% 0.3% 3

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000150613 HYDROGEN IN SILICON//MULTIVACANCY//HYDROGEN IN SI
2 0.0000131788 SIMOX//BURIED OXIDE LAYER//CONTACTLESS I V METHOD
3 0.0000108214 WAFER BONDING//ANODIC BONDING//SILICON WAFER BONDING
4 0.0000095276 TRANSIENT ENHANCED DIFFUSION//SWAMP//PAIR DIFFUSION MODEL
5 0.0000092417 GETTERING//GETTERING EFFICIENCY//SI AU
6 0.0000071296 IBIEC//SOLID PHASE EPITAXIAL GROWTH//LATERAL SOLID PHASE EPITAXY
7 0.0000066263 POSITRON BEAM//SLOW POSITRON BEAM//POSITRON MICROSCOPE
8 0.0000059241 CLUSTER OF DEFECTS//GROUP II ELEMENTS//SI CD
9 0.0000057531 RANGE PARAMETERS//SOFT ERROR MAPPING//HIGH ENERGY ION IMPLANTATION
10 0.0000055582 HE VACANCY CLUSTER//HELIUM BUBBLE//PI3 TM