Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 11585 | 904 | 19.4 | 40% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 2430 | 3649 | INTENSE PULSED ION BEAM//HIGH CURRENT PULSED ELECTRON BEAM//HIGH INTENSITY PULSED ION BEAM |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | EXCIMER LASER DOPING | Author keyword | 2 | 67% | 0% | 2 |
| 2 | LASER INDUCED SURFACE PROCESS | Author keyword | 1 | 100% | 0% | 2 |
| 3 | WIDE BANDGAP OXIDES | Author keyword | 1 | 100% | 0% | 2 |
| 4 | INDIUM ANTIMONITE | Author keyword | 1 | 50% | 0% | 1 |
| 5 | LASER INDUCED BOND BREAKING | Author keyword | 1 | 50% | 0% | 1 |
| 6 | PATTERNED DOPING | Author keyword | 1 | 50% | 0% | 1 |
| 7 | PHYS CHIM MATERIAUX STRASBOURG | Address | 1 | 50% | 0% | 1 |
| 8 | SIMPLE MOLECULES | Author keyword | 1 | 50% | 0% | 1 |
| 9 | SIO2 SI SYSTEM | Author keyword | 1 | 50% | 0% | 1 |
| 10 | TRANSIENT THERMOMETRY | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | EXCIMER LASER DOPING | 2 | 67% | 0% | 2 | Search EXCIMER+LASER+DOPING | Search EXCIMER+LASER+DOPING |
| 2 | LASER INDUCED SURFACE PROCESS | 1 | 100% | 0% | 2 | Search LASER+INDUCED+SURFACE+PROCESS | Search LASER+INDUCED+SURFACE+PROCESS |
| 3 | WIDE BANDGAP OXIDES | 1 | 100% | 0% | 2 | Search WIDE+BANDGAP+OXIDES | Search WIDE+BANDGAP+OXIDES |
| 4 | INDIUM ANTIMONITE | 1 | 50% | 0% | 1 | Search INDIUM+ANTIMONITE | Search INDIUM+ANTIMONITE |
| 5 | LASER INDUCED BOND BREAKING | 1 | 50% | 0% | 1 | Search LASER+INDUCED+BOND+BREAKING | Search LASER+INDUCED+BOND+BREAKING |
| 6 | PATTERNED DOPING | 1 | 50% | 0% | 1 | Search PATTERNED+DOPING | Search PATTERNED+DOPING |
| 7 | SIMPLE MOLECULES | 1 | 50% | 0% | 1 | Search SIMPLE+MOLECULES | Search SIMPLE+MOLECULES |
| 8 | SIO2 SI SYSTEM | 1 | 50% | 0% | 1 | Search SIO2+SI+SYSTEM | Search SIO2+SI+SYSTEM |
| 9 | TRANSIENT THERMOMETRY | 1 | 50% | 0% | 1 | Search TRANSIENT+THERMOMETRY | Search TRANSIENT+THERMOMETRY |
| 10 | ZONE OF PHOTON INFLUENCE | 1 | 50% | 0% | 1 | Search ZONE+OF+PHOTON+INFLUENCE | Search ZONE+OF+PHOTON+INFLUENCE |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ELECTRONIC BOND BREAKING | 8 | 100% | 1% | 5 |
| 2 | GAP 110 SURFACES | 8 | 100% | 1% | 5 |
| 3 | GAP110 SURFACE | 6 | 100% | 0% | 4 |
| 4 | SI ATOMS | 4 | 33% | 1% | 10 |
| 5 | STIMULATED MODIFICATION | 2 | 44% | 0% | 4 |
| 6 | 116 EV PHOTON EXCITATION | 1 | 100% | 0% | 2 |
| 7 | GA 0 EMISSION | 1 | 100% | 0% | 2 |
| 8 | GAP SURFACES | 1 | 100% | 0% | 2 |
| 9 | EXCITED CDS | 1 | 40% | 0% | 2 |
| 10 | GILD | 1 | 40% | 0% | 2 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| Electron exchange and oxygen rearrangements on photoactivated oxide surface | 2000 | 2 | 8 | 63% |
| LASER-BEAM INTERACTION WITH DEFECTS ON SEMICONDUCTOR SURFACES - AN APPROACH TO GENERATION OF DEFECT-FREE SURFACES | 1995 | 8 | 51 | 45% |
| Laser-induced desorption from STM-selected semiconductor sites | 1999 | 3 | 24 | 50% |
| Treatment of semiconductor surfaces by laser-induced electronic excitation | 2001 | 8 | 67 | 31% |
| LASER-INDUCED DESORPTION | 1991 | 12 | 32 | 31% |
| MELTING MODEL OF PULSED LASER PROCESSING | 1984 | 19 | 36 | 58% |
| MELTING OF SEMICONDUCTORS UNDER THE ACTION OF PULSED LASER-RADIATION (REVIEW) | 1986 | 7 | 26 | 50% |
| TIME RESOLVED MEASUREMENTS DURING PULSED LASER IRRADIATION OF SILICON | 1984 | 13 | 70 | 54% |
| OPTICAL AND ELECTRICAL-PROPERTIES OF PULSED LASER ANNEALED SILICON | 1984 | 19 | 35 | 37% |
| LASER PROCESSING OF SEMICONDUCTORS - AN OVERVIEW | 1984 | 2 | 38 | 55% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | PHYS CHIM MATERIAUX STRASBOURG | 1 | 50% | 0.1% | 1 |
| 2 | UMR 6631CNRS | 1 | 50% | 0.1% | 1 |
| 3 | FRE 2165CNRS | 0 | 33% | 0.1% | 1 |
| 4 | GRP INTERDISCIPLINAIRE ABLAT LASER PLICAT | 0 | 25% | 0.1% | 1 |
| 5 | SHANDONG OPT FIBER SENSING TECHNOL | 0 | 25% | 0.1% | 1 |
| 6 | EURATOM PLASM HYS | 0 | 20% | 0.1% | 1 |
| 7 | WM KECK FREE ELE ON LASER | 0 | 20% | 0.1% | 1 |
| 8 | LSLA | 0 | 17% | 0.1% | 1 |
| 9 | DIODE PUMPED SOLID STATE LASER | 0 | 14% | 0.1% | 1 |
| 10 | PHOTOVOLTA IPV | 0 | 13% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000201299 | HYDROGEN INDUCED FRACTURE//SURFACE SCALE//SILUMINS |
| 2 | 0.0000185488 | EXCIMER LASER CRYSTALLIZATION//LASER CRYSTALLIZATION//EXCIMER LASER ANNEALING |
| 3 | 0.0000184648 | THERMOGRADIENT EFFECT//HETERO EPITAXIAL STRUCTURE//LASER INDUCED ATOMIC DEFECTS |
| 4 | 0.0000163201 | ZONE MELTING RECRYSTALLIZATION//ARCHITECTURE TECH//LASER INDUCED TEMPERATURE RISE |
| 5 | 0.0000145004 | INFNSEZ LECCE//FAST SIGNALS//FOCUSED ION BEAM IMAGING |
| 6 | 0.0000137018 | QUANTUM SENSITIVITY LIMIT//ACTIVE QUANTUM FILTER//LARGE AREA FILMS |
| 7 | 0.0000109785 | MULTIPLE TRAPPING IN LOCALIZED STATES//// |
| 8 | 0.0000104724 | PHYSICOCHIM MOLEC ORSAY//SURFACE STRUCTURE AND ROUGHNESS//DESORPTION INDUCED BY ELECTRON STIMULATION |
| 9 | 0.0000091163 | INFORMAT OPTIC TECHNOL//LOW ENERGY SINGLE CRYSTAL SURFACES//MATH THEORET SCI |
| 10 | 0.0000085431 | INFORMAT OPT TECHNOL//HOLE SPIN//7170EJ |