Class information for:
Level 1: SELECTIVE AREA GROWTH//TERTIARYBUTYLCHLORIDE//SELECTIVE EPITAXY

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
11342 922 14.5 73%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
260 18934 GAAS ON SI//GAAS SI//GAINP

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SELECTIVE AREA GROWTH Author keyword 12 22% 5% 46
2 TERTIARYBUTYLCHLORIDE Author keyword 11 100% 1% 6
3 SELECTIVE EPITAXY Author keyword 7 15% 5% 45
4 TORINO TECHNOL Address 6 80% 0% 4
5 TRIANGULAR VOID Author keyword 6 80% 0% 4
6 AREA SELECTIVE EPITAXY Author keyword 6 71% 1% 5
7 PERIODIC SUPPLY EPITAXY Author keyword 6 71% 1% 5
8 IN SITU ETCHING Author keyword 5 35% 1% 12
9 SELECTIVE MOCVD Author keyword 4 67% 0% 4
10 SURFACE PHOTO ABSORPTION Author keyword 3 57% 0% 4

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 SELECTIVE AREA GROWTH 12 22% 5% 46 Search SELECTIVE+AREA+GROWTH Search SELECTIVE+AREA+GROWTH
2 TERTIARYBUTYLCHLORIDE 11 100% 1% 6 Search TERTIARYBUTYLCHLORIDE Search TERTIARYBUTYLCHLORIDE
3 SELECTIVE EPITAXY 7 15% 5% 45 Search SELECTIVE+EPITAXY Search SELECTIVE+EPITAXY
4 TRIANGULAR VOID 6 80% 0% 4 Search TRIANGULAR+VOID Search TRIANGULAR+VOID
5 AREA SELECTIVE EPITAXY 6 71% 1% 5 Search AREA+SELECTIVE+EPITAXY Search AREA+SELECTIVE+EPITAXY
6 PERIODIC SUPPLY EPITAXY 6 71% 1% 5 Search PERIODIC+SUPPLY+EPITAXY Search PERIODIC+SUPPLY+EPITAXY
7 IN SITU ETCHING 5 35% 1% 12 Search IN+SITU+ETCHING Search IN+SITU+ETCHING
8 SELECTIVE MOCVD 4 67% 0% 4 Search SELECTIVE+MOCVD Search SELECTIVE+MOCVD
9 SURFACE PHOTO ABSORPTION 3 57% 0% 4 Search SURFACE+PHOTO+ABSORPTION Search SURFACE+PHOTO+ABSORPTION
10 FECFET 3 100% 0% 3 Search FECFET Search FECFET

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 AREA GROWTH 14 40% 3% 27
2 BANDGAP ENERGY CONTROL 11 78% 1% 7
3 MOMBE CBE 11 78% 1% 7
4 SIO2 MASKED INP 8 100% 1% 5
5 ETCHED MESAS 6 100% 0% 4
6 PERIODIC SUPPLY EPITAXY 6 100% 0% 4
7 INNER STRIPE LASERS 4 75% 0% 3
8 SEMI INSULATING INP 4 28% 1% 11
9 OMCVD GROWTH 3 50% 1% 5
10 MOCVD REACTOR 3 57% 0% 4

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
Hydride vapor phase epitaxy revisited 1997 23 86 38%
InP-based photonic circuits: Comparison of monolithic integration techniques 2010 7 58 19%
ADVANCE OF MBE IN CHINA 1985 0 1 100%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 TORINO TECHNOL 6 80% 0.4% 4
2 INORGAN MAT PHYS CHEM 2 50% 0.3% 3
3 1126 1 40% 0.2% 2
4 GEORGIA TECHNOL GTL 1 33% 0.2% 2
5 CXII 1 50% 0.1% 1
6 DEVICE S 1 50% 0.1% 1
7 FRANCE TELECOM SA 1 50% 0.1% 1
8 MAT OPT PHOTON MICRONANO SYST 1 50% 0.1% 1
9 MAT OPT PHOTON SYST MOPS 1 50% 0.1% 1
10 NANOMAT TECHNOL CNMT 1 50% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000182915 TRIMETHYLINDIUM//CHEMICAL BEAM EPITAXY CBE//MOLECULAR LAYER EPITAXY
2 0.0000182835 ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS
3 0.0000169294 ING ELECT SEES//SECC PUEBLA//ALLOY SOURCE
4 0.0000145224 QUANTUM WIRE LASERS//QUANTUM WIRE LASER//QUANTUM WIRE
5 0.0000136742 MODE EXPANDERS//ALIGNMENT TOLERANT STRUCTURES//SPOT SIZE CONVERTER
6 0.0000111934 ELECTROABSORPTION MODULATORS//ELECTROABSORPTION//ELECTROABSORPTION MODULATOR
7 0.0000104648 MEMBRANE LASER//DISTRIBUTED REFLECTOR DR LASER//QUANTUM NANOELECT
8 0.0000093340 LUMILEDS LIGHTING//ZINC DIFFUSION//ACCEPTOR DIFFUSION
9 0.0000080234 FE DOPED INP//PHOSPHORUS VAPOR PRESSURE//WAFER ANNEALING
10 0.0000071620 MICROWAVE PHOTON TECHNOL//DISTRIBUTED FEEDBACK LASERS//DISTRIBUTED BRAGG REFLECTOR LASERS