Class information for:
Level 1: MAGNET SENSOR//GROUP III V EXCEPT NITRIDES//COPPER VACANCY COMPLEX

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
11259 929 17.6 47%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
913 10550 EL2//NONIONIZING ENERGY LOSS NIEL//DX CENTERS

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MAGNET SENSOR Address 24 82% 2% 14
2 GROUP III V EXCEPT NITRIDES Author keyword 4 75% 0% 3
3 COPPER VACANCY COMPLEX Author keyword 1 100% 0% 2
4 M3 M4 DEFECTS Author keyword 1 100% 0% 2
5 RADIATION RESISTANT HALL SENSORS Author keyword 1 100% 0% 2
6 OBNINSK BRANCH Address 1 11% 1% 10
7 RJA LEVESQUE Address 1 40% 0% 2
8 DEEP LEVEL TRANSIENT SPECTROSCOPY DLTS Author keyword 1 12% 1% 7
9 AS VACANCY Author keyword 1 50% 0% 1
10 COMPLEX DOPING Author keyword 1 50% 0% 1

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class		 LCSH search Wikipedia search
1 GROUP III V EXCEPT NITRIDES 4 75% 0% 3 Search GROUP+III+V+EXCEPT+NITRIDES Search GROUP+III+V+EXCEPT+NITRIDES
2 COPPER VACANCY COMPLEX 1 100% 0% 2 Search COPPER+VACANCY+COMPLEX Search COPPER+VACANCY+COMPLEX
3 M3 M4 DEFECTS 1 100% 0% 2 Search M3+M4+DEFECTS Search M3+M4+DEFECTS
4 RADIATION RESISTANT HALL SENSORS 1 100% 0% 2 Search RADIATION+RESISTANT+HALL+SENSORS Search RADIATION+RESISTANT+HALL+SENSORS
5 DEEP LEVEL TRANSIENT SPECTROSCOPY DLTS 1 12% 1% 7 Search DEEP+LEVEL+TRANSIENT+SPECTROSCOPY+DLTS Search DEEP+LEVEL+TRANSIENT+SPECTROSCOPY+DLTS
6 AS VACANCY 1 50% 0% 1 Search AS+VACANCY Search AS+VACANCY
7 COMPLEX DOPING 1 50% 0% 1 Search COMPLEX+DOPING Search COMPLEX+DOPING
8 DEEP ACCEPTOR STATES 1 50% 0% 1 Search DEEP+ACCEPTOR+STATES Search DEEP+ACCEPTOR+STATES
9 DEFECT METASTABILITY 1 50% 0% 1 Search DEFECT+METASTABILITY Search DEFECT+METASTABILITY
10 ELECTRIC FIELD ENHANCED EMISSION 1 50% 0% 1 Search ELECTRIC+FIELD+ENHANCED+EMISSION Search ELECTRIC+FIELD+ENHANCED+EMISSION

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 AS GROWN GAAS 19 51% 3% 27
2 EL2 DEFECT 7 30% 2% 21
3 ENCAPSULATED CZOCHRALSKI GAP 6 80% 0% 4
4 GROWN N GAAS 6 80% 0% 4
5 NATIVE VACANCIES 6 53% 1% 8
6 IRRADIATION INDUCED DEFECTS 5 20% 3% 24
7 IRRADIATED GAP 5 63% 1% 5
8 METASTABLE VACANCY 4 67% 0% 4
9 TRANSMUTED IMPURITIES 3 100% 0% 3
10 ANTISITE RELATED DEFECTS 3 60% 0% 3

Journals

Reviews


Title Publ. year Cit. Active
references		 % act. ref.
to same field
Positron annihilation spectroscopy of defects in semiconductors 1998 70 78 28%
IRRADIATION-INDUCED DEFECTS IN GAAS 1985 329 34 56%
Structural analysis of intrinsic defects in GaAs and A1(x)Gal(1-x)As by magnetooptically detected magnetic resonance spectroscopy 1999 14 80 44%
Modification of semiconductors with proton beams. A review 2000 18 49 20%
Radiation doping methods of semiconductor materials: The nuclear doping by charged particles 1996 2 9 100%
TRANSMUTATION DOPING OF SEMICONDUCTORS BY CHARGED-PARTICLES (REVIEW) 1992 4 10 100%
POSITRON-ANNIHILATION SPECTROSCOPY OF VACANCY-RELATED DEFECTS IN SEMICONDUCTORS 1992 1 22 55%
RADIATION DEFECTS IN SEMICONDUCTOR COMPOUND-II, COMPOUND-IV, COMPOUND-V2 1986 7 14 64%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 MAGNET SENSOR 24 82% 1.5% 14
2 OBNINSK BRANCH 1 11% 1.1% 10
3 RJA LEVESQUE 1 40% 0.2% 2
4 RADIOISOTOPE RADIAT PL TEAM 1 50% 0.1% 1
5 KUZNETSOV PHYSICOTECH 0 15% 0.3% 3
6 PLASMA PHYS AS CR 0 11% 0.4% 4
7 COMPOUND SEMICOND MICROELE 0 33% 0.1% 1
8 UEPEM 0 33% 0.1% 1
9 LETICEA TECHNOL AVANCEES 0 11% 0.2% 2
10 NANO SCALE QUANTUM DEVICES 0 20% 0.1% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000216967 EL2//CARBON ACCEPTOR//SEMI INSULATING GALLIUM ARSENIDE
2 0.0000159713 FE DOPED INP//PHOSPHORUS VAPOR PRESSURE//WAFER ANNEALING
3 0.0000142657 NONIONIZING ENERGY LOSS NIEL//DISPLACEMENT DAMAGE DOSE//NONIONIZING ENERGY LOSS
4 0.0000125342 SURFACE AND INTERFACE PHENOMENA//TELECOMMUN ADVANCEMENTS ORG//SENDAI
5 0.0000125329 DOT IN A WELL STRUCTURES//EXCITATION POWER DEPENDENCES//RECOMBINATION BARRIER
6 0.0000105065 LOCAL VIBRATION MODES//DIRECT FAST SCARLET 4BS//GAAS C
7 0.0000101708 POSITRON BEAM//SLOW POSITRON BEAM//POSITRON MICROSCOPE
8 0.0000078945 STATE SCI EXPT TECH INFORMAT PROTECT PRO//CN PPP//WIDE GAP NANOCRYSTALS
9 0.0000073288 LT GAAS//LOW TEMPERATURE GROWN GAAS//LOW TEMPERATURE GAAS
10 0.0000072016 GAP N//PICOSECOND TIMING RESOLUTION//SI H BOND DISSOCIATION