Class information for:
Level 1: STAEBLER WRONSKI EFFECT//HYDROGENATED AMORPHOUS SILICON//SOLAR CELLS

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
112 4214 20.0 54%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
252 19240 MICROCRYSTALLINE SILICON//JOURNAL OF NON-CRYSTALLINE SOLIDS//PHOTOVOLTA THIN FILM ELECT

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 STAEBLER WRONSKI EFFECT Author keyword 27 58% 1% 31
2 HYDROGENATED AMORPHOUS SILICON Author keyword 18 22% 2% 73
3 SOLAR CELLS Journal 11 10% 2% 99
4 LIGHT INDUCED ANNEALING Author keyword 11 100% 0% 6
5 DEFECT POOL Author keyword 9 83% 0% 5
6 SEMICONDUCTORS AND SEMIMETALS Journal 8 22% 1% 32
7 A SI H Author keyword 6 19% 1% 30
8 ANNEALING ACTIVATION ENERGY DISTRIBUTION Author keyword 6 100% 0% 4
9 JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS Journal 5 16% 1% 29
10 MAT SEMICOND MET Address 5 63% 0% 5

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 STAEBLER WRONSKI EFFECT 27 58% 1% 31 Search STAEBLER+WRONSKI+EFFECT Search STAEBLER+WRONSKI+EFFECT
2 HYDROGENATED AMORPHOUS SILICON 18 22% 2% 73 Search HYDROGENATED+AMORPHOUS+SILICON Search HYDROGENATED+AMORPHOUS+SILICON
3 LIGHT INDUCED ANNEALING 11 100% 0% 6 Search LIGHT+INDUCED+ANNEALING Search LIGHT+INDUCED+ANNEALING
4 DEFECT POOL 9 83% 0% 5 Search DEFECT+POOL Search DEFECT+POOL
5 A SI H 6 19% 1% 30 Search A+SI++H Search A+SI++H
6 ANNEALING ACTIVATION ENERGY DISTRIBUTION 6 100% 0% 4 Search ANNEALING+ACTIVATION+ENERGY+DISTRIBUTION Search ANNEALING+ACTIVATION+ENERGY+DISTRIBUTION
7 CHARGED DANGLING BONDS 4 75% 0% 3 Search CHARGED+DANGLING+BONDS Search CHARGED+DANGLING+BONDS
8 LIGHT SOAKING 3 23% 0% 13 Search LIGHT+SOAKING Search LIGHT+SOAKING
9 APPLICATION OF A SI SOLAR CELL 3 100% 0% 3 Search APPLICATION+OF+A+SI+SOLAR+CELL Search APPLICATION+OF+A+SI+SOLAR+CELL
10 DEFECT POOL MODEL 3 100% 0% 3 Search DEFECT+POOL+MODEL Search DEFECT+POOL+MODEL

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 A SI H 114 25% 10% 401
2 HYDROGENATED AMORPHOUS SILICON 63 17% 8% 333
3 INDUCED METASTABLE DEFECTS 53 78% 1% 35
4 METASTABLE DEFECTS 41 47% 2% 64
5 DANGLING BONDS 40 42% 2% 73
6 DISPERSIVE DIFFUSION 24 82% 0% 14
7 ALPHA SI H 24 50% 1% 34
8 CONDUCTIVITY CHANGES 20 37% 1% 42
9 DEFECT POOL MODEL 15 45% 1% 26
10 GAP STATE DISTRIBUTION 15 82% 0% 9

Journals


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 SOLAR CELLS 11 10% 2% 99
2 SEMICONDUCTORS AND SEMIMETALS 8 22% 1% 32
3 JAPAN ANNUAL REVIEWS IN ELECTRONICS COMPUTERS & TELECOMMUNICATIONS 5 16% 1% 29

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
LIGHT-INDUCED METASTABLE DEFECTS IN HYDROGENATED AMORPHOUS-SILICON - A SYSTEMATIC STUDY 1985 822 72 83%
Development in understanding and controlling the Staebler-Wronski effect in a-Si : H 2001 73 78 85%
Diffusion and evolution of hydrogen in hydrogenated amorphous and microcrystalline silicon 2003 56 65 74%
Staebler-Wronski effect in hydrogenated amorphous silicon and related alloy films 2004 41 75 89%
THE OPTICAL-ABSORPTION EDGE OF A-SI-H 1984 328 49 71%
DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM 1987 170 69 72%
An empirical density of states and joint density of states analysis of hydrogenated amorphous silicon: a review 2004 16 33 70%
Light-induced defect creation under intense pulsed illumination in hydrogenated amorphous silicon 2009 1 31 87%
Hydrogen phenomena in hydrogenated amorphous silicon 1999 29 81 62%
STRUCTURAL CHARACTERIZATION OF NONCRYSTALLINE SOLIDS AND GLASSES USING SOLID-STATE NMR 1992 215 478 13%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ.
in class
1 MAT SEMICOND MET 5 63% 0.1% 5
2 ELECT ENGN SAEKI KU 2 67% 0.0% 2
3 ELECT DIGITAL SYST ENGN 2 23% 0.2% 7
4 GAS POWER RD 2 43% 0.1% 3
5 IMIO PW 1 33% 0.1% 3
6 THIN FILM SILICON SOLAR CELLS SUPER 1 16% 0.1% 4
7 AG THERMOCHEMIE MIKROKINET 1 50% 0.0% 1
8 CNRS UMR 0258 1 50% 0.0% 1
9 ENGN SIST COMP 1 50% 0.0% 1
10 FAK NAT MAT WISSEN THERMOCHEM MIKROKINET 1 50% 0.0% 1

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000228329 JOINT HIGH TECHNOL//STEADY STATE PHOTOCARRIER GRATING//JOINT HIGHTECHNOL
2 0.0000220884 GERMANIUM CARBON//A SIGE//GE1 XCX
3 0.0000149898 SIH2//SIH3//SILANE PLASMA
4 0.0000146410 A SIH A SIGEH//AMORPHOUS SILICON BASED ALLOY//DIP SCI MAT TERRA
5 0.0000142408 FLUCTUATION ELECTRON MICROSCOPY//FLUCTUATION MICROSCOPY//REDUCED DENSITY FUNCTION
6 0.0000109749 ELECT TELECOMMUN COMP//IMAGE ACQUISITION AND REPRESENTATION//MULTISPECTRAL STRUCTURES
7 0.0000105381 LADDER SILICONE SPIN ON GLASS LS SOG//POLYSILOXENE BASED FILM//SIO2 PATTERN GENERATION
8 0.0000095900 MICROCRYSTALLINE SILICON//SID PHYS DEVICES//MU C SI H
9 0.0000093712 FINE GRAIN POLYCRYSTALLINE SI//HYDROGENATED AMORPHOUS SI//BONDING D ORBITALS
10 0.0000093687 DIFFUSION TEMPERATURE//DEVICE FUNCT SECT//TWO DIMENSIONAL DEVICE SIMULATION