Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
11137 | 939 | 19.7 | 83% |
Classes in level above (level 2) |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | SI111 SUBSTRATES | Author keyword | 9 | 83% | 1% | 5 |
2 | SI111 SUBSTRATE | Author keyword | 5 | 50% | 1% | 7 |
3 | ALN BUFFER | Author keyword | 5 | 41% | 1% | 9 |
4 | FNW IEP AHE | Address | 4 | 75% | 0% | 3 |
5 | GAN SI111 | Author keyword | 4 | 75% | 0% | 3 |
6 | ENGN LED SI SUBSTRATE | Address | 3 | 100% | 0% | 3 |
7 | MALAYSIAN IND TECHNOL MITEC | Address | 3 | 60% | 0% | 3 |
8 | ALGAN INTERLAYER | Author keyword | 2 | 67% | 0% | 2 |
9 | RECH HETERO EXPITAXIE PLICAT | Address | 2 | 67% | 0% | 2 |
10 | GAN ON SI | Author keyword | 2 | 18% | 1% | 11 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | SI111 SUBSTRATES | 9 | 83% | 1% | 5 | Search SI111+SUBSTRATES | Search SI111+SUBSTRATES |
2 | SI111 SUBSTRATE | 5 | 50% | 1% | 7 | Search SI111+SUBSTRATE | Search SI111+SUBSTRATE |
3 | ALN BUFFER | 5 | 41% | 1% | 9 | Search ALN+BUFFER | Search ALN+BUFFER |
4 | GAN SI111 | 4 | 75% | 0% | 3 | Search GAN+SI111 | Search GAN+SI111 |
5 | ALGAN INTERLAYER | 2 | 67% | 0% | 2 | Search ALGAN+INTERLAYER | Search ALGAN+INTERLAYER |
6 | GAN ON SI | 2 | 18% | 1% | 11 | Search GAN+ON+SI | Search GAN+ON+SI |
7 | HOT MESH CVD | 2 | 43% | 0% | 3 | Search HOT+MESH+CVD | Search HOT+MESH+CVD |
8 | SI 111 SUBSTRATE | 2 | 43% | 0% | 3 | Search SI+111+SUBSTRATE | Search SI+111+SUBSTRATE |
9 | AIN GAN MULTILAYERS | 1 | 100% | 0% | 2 | Search AIN+GAN+MULTILAYERS | Search AIN+GAN+MULTILAYERS |
10 | AIN LAYER | 1 | 100% | 0% | 2 | Search AIN+LAYER | Search AIN+LAYER |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | INTERMEDIATE LAYER | 57 | 45% | 10% | 96 |
2 | SINGLE CRYSTALLINE GAN | 43 | 61% | 5% | 46 |
3 | CRACK FREE GAN | 33 | 77% | 2% | 23 |
4 | TEMPERATURE ALN INTERLAYERS | 27 | 70% | 2% | 23 |
5 | HIGH QUALITY GAN | 26 | 38% | 6% | 53 |
6 | STRESS CONTROL | 21 | 65% | 2% | 20 |
7 | SI111 SUBSTRATE | 11 | 39% | 2% | 22 |
8 | LATERAL CONFINED EPITAXY | 10 | 73% | 1% | 8 |
9 | ALN BUFFER | 10 | 46% | 2% | 16 |
10 | ALGAN ALN INTERMEDIATE LAYER | 8 | 70% | 1% | 7 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
A review of GaN-based optoelectronic devices on silicon substrate | 2014 | 7 | 91 | 78% |
Prospects of III-nitride optoelectronics grown on Si | 2013 | 27 | 145 | 49% |
Substrates for epitaxy of gallium nitride: New materials and techniques | 2008 | 33 | 76 | 30% |
Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films | 2014 | 1 | 65 | 45% |
Epitaxy Part A. LEDs Based on Heteroepitaxial GaN on Si Substrates | 2013 | 0 | 139 | 60% |
Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review | 2014 | 0 | 36 | 44% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | FNW IEP AHE | 4 | 75% | 0.3% | 3 |
2 | ENGN LED SI SUBSTRATE | 3 | 100% | 0.3% | 3 |
3 | MALAYSIAN IND TECHNOL MITEC | 3 | 60% | 0.3% | 3 |
4 | RECH HETERO EXPITAXIE PLICAT | 2 | 67% | 0.2% | 2 |
5 | NANODEVICE SYST | 2 | 12% | 1.5% | 14 |
6 | SEKR PN 5 2 | 1 | 40% | 0.2% | 2 |
7 | THEORET ELEKTROTECH | 1 | 13% | 0.7% | 7 |
8 | PLICAT SOLAI | 1 | 20% | 0.4% | 4 |
9 | EDUC MINIST ENGN LUMINESCENCE MAT DEVIC | 1 | 33% | 0.2% | 2 |
10 | NOVEL SEMICOND MAT | 1 | 17% | 0.4% | 4 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000259288 | GAN//HYDRIDE VAPOR PHASE EPITAXY//AMMONOTHERMAL CRYSTAL GROWTH |
2 | 0.0000156167 | LIGAO2//AMORPHOUS GAN//NON POLAR NITRIDES |
3 | 0.0000134732 | SEMICONDUCTING ALUMINUM COMPOUNDS//CERAM OPERAT//ALGAN |
4 | 0.0000111275 | GAN NANOWIRES//AMMONIATING//GAN NANORODS |
5 | 0.0000109796 | GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING |
6 | 0.0000105589 | CUBIC GAN//FB PHYS 6//HEXAGONAL GAN |
7 | 0.0000102528 | EPITAXIAL SEMICOND GRP//EXP SOLID STATE PHYS 3//RECIPROCAL SPACE ANALYSIS |
8 | 0.0000099550 | METAL SEMICONDUCTOR METAL MSM//ULTRAVIOLET UV DETECTOR//PHOTODETECTORS PDS |
9 | 0.0000095552 | A PLANE GAN//LED TECHNOL//NONPOLAR |
10 | 0.0000089974 | AL1 XINXN//ALINN//RESONANT CAVITY LIGHT EMITTING DIODE RCLED |