Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 10942 | 953 | 16.8 | 40% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 2430 | 3649 | INTENSE PULSED ION BEAM//HIGH CURRENT PULSED ELECTRON BEAM//HIGH INTENSITY PULSED ION BEAM |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | ZONE MELTING RECRYSTALLIZATION | Author keyword | 1 | 31% | 0% | 4 |
| 2 | ARCHITECTURE TECH | Address | 1 | 100% | 0% | 2 |
| 3 | LASER INDUCED TEMPERATURE RISE | Author keyword | 1 | 50% | 0% | 2 |
| 4 | SINGLE CRYSTAL FERROSPINEL FILMS | Author keyword | 1 | 100% | 0% | 2 |
| 5 | ZMR | Author keyword | 1 | 40% | 0% | 2 |
| 6 | 3 DIMENSIONAL INTEGRATION | Author keyword | 1 | 33% | 0% | 2 |
| 7 | EFFECTIVE SURFACE CHARGE DENSITY | Author keyword | 1 | 50% | 0% | 1 |
| 8 | GEOMETRICAL HINDRANCE | Author keyword | 1 | 50% | 0% | 1 |
| 9 | HIGH SPEED ETCHING | Author keyword | 1 | 50% | 0% | 1 |
| 10 | LASER ETCHED PROFILE | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | STRIP HEATER | 8 | 100% | 1% | 5 |
| 2 | ZONE MELTING RECRYSTALLIZATION | 4 | 38% | 1% | 9 |
| 3 | SCANNING CW LASER | 3 | 45% | 1% | 5 |
| 4 | MELTED SILICON | 3 | 60% | 0% | 3 |
| 5 | 2 LAYER STRUCTURE | 2 | 67% | 0% | 2 |
| 6 | ARTIFICIAL EPITAXY GRAPHOEPITAXY | 2 | 67% | 0% | 2 |
| 7 | ON INSULATOR FILMS | 2 | 67% | 0% | 2 |
| 8 | SUBBOUNDARIES | 2 | 43% | 0% | 3 |
| 9 | MELTED SILICON FILMS | 1 | 100% | 0% | 2 |
| 10 | SAWTOOTH PROFILE GRATINGS | 1 | 100% | 0% | 2 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references | % act. ref. to same field |
|---|---|---|---|---|
| THERMAL-ANALYSIS OF ZONE-MELTING RECRYSTALLIZATION OF SILICON-ON-INSULATOR STRUCTURES WITH AN INFRARED HEAT-SOURCE - AN OVERVIEW | 1992 | 10 | 25 | 88% |
| ORIENTED CRYSTALLIZATION ON AMORPHOUS SUBSTRATES | 1995 | 3 | 22 | 36% |
| STRUCTURAL TRANSFORMATION IN SILICON BY PULSE HEATING | 1992 | 6 | 60 | 28% |
| BEAM RECRYSTALLIZED POLYCRYSTALLINE SILICON - PROPERTIES, APPLICATIONS, AND TECHNIQUES | 1984 | 9 | 18 | 83% |
| TRANSIENT ANNEALING OF SEMICONDUCTORS BY LASER, ELECTRON-BEAM AND RADIANT HEATING TECHNIQUES | 1985 | 36 | 297 | 32% |
| TEMPERATURE DISTRIBUTIONS AND SOLID-PHASE REACTION-RATES PRODUCED BY SCANNING CW BEAMS | 1984 | 1 | 3 | 100% |
| MODIFICATION OF SILICON PROPERTIES WITH LASERS, ELECTRON-BEAMS, AND INCOHERENT-LIGHT | 1984 | 4 | 48 | 58% |
| ELECTRONIC DEFECTS IN CW TRANSIENT THERMAL PROCESSED SILICON | 1984 | 1 | 15 | 67% |
| MAPPING SOLID-SURFACES WITH A RAMAN MICROPROBE | 1986 | 0 | 17 | 47% |
| LASER APPLICATIONS TO SEMICONDUCTOR-DEVICE PROCESSING | 1983 | 0 | 6 | 67% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | ARCHITECTURE TECH | 1 | 100% | 0.2% | 2 |
| 2 | MICROSYST TECH | 1 | 50% | 0.1% | 1 |
| 3 | PHYS CHEM SEMICOND | 1 | 50% | 0.1% | 1 |
| 4 | PL PHYS PL MATHS | 1 | 50% | 0.1% | 1 |
| 5 | ARBEITSBEREICH HALBLEITERTECHNOL | 0 | 25% | 0.1% | 1 |
| 6 | FUKUURA KANAZAWA KU | 0 | 25% | 0.1% | 1 |
| 7 | ALLEN CLARK | 0 | 20% | 0.1% | 1 |
| 8 | ARCHITECTURE TECHNOL | 0 | 17% | 0.1% | 1 |
| 9 | ENGN SCI ELECT ENGN | 0 | 17% | 0.1% | 1 |
| 10 | FB CHEM TECH | 0 | 13% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000163201 | EXCIMER LASER DOPING//LASER INDUCED SURFACE PROCESS//WIDE BANDGAP OXIDES |
| 2 | 0.0000130866 | EPITAXIAL AL2O3//AL2O3 ON SI//DENVER AEROSP TECH OPERAT |
| 3 | 0.0000126624 | EXCIMER LASER CRYSTALLIZATION//LASER CRYSTALLIZATION//EXCIMER LASER ANNEALING |
| 4 | 0.0000108066 | QUANTUM SENSITIVITY LIMIT//ACTIVE QUANTUM FILTER//LARGE AREA FILMS |
| 5 | 0.0000102662 | INFNSEZ LECCE//FAST SIGNALS//FOCUSED ION BEAM IMAGING |
| 6 | 0.0000098257 | POLYSILICON RESISTORS//HEAVILY DOPED POLYSILICON RESISTOR//LPCVD SI LAYERS |
| 7 | 0.0000092842 | ZONE REFINING//ULTRA PURE MAT//ULTR URE MAT |
| 8 | 0.0000076568 | SIMOX//BURIED OXIDE LAYER//CONTACTLESS I V METHOD |
| 9 | 0.0000063432 | IBIEC//SOLID PHASE EPITAXIAL GROWTH//LATERAL SOLID PHASE EPITAXY |
| 10 | 0.0000060040 | HAIRPIN FILAMENT//POINT CATHODE//MICROWAVE COMMUN SYST GRP |