Class information for: |
Basic class information |
ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
---|---|---|---|
10789 | 967 | 15.8 | 48% |
Classes in level above (level 2) |
ID, lev. above |
Publications | Label for level above |
---|---|---|
97 | 24964 | IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES//IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS//MICROWAVE AND OPTICAL TECHNOLOGY LETTERS |
Terms with highest relevance score |
Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|---|
1 | NOISE PARAMETERS | Author keyword | 26 | 40% | 5% | 51 |
2 | HIGH FREQUENCY HF NOISE | Author keyword | 15 | 88% | 1% | 7 |
3 | KINK PHENOMENON | Author keyword | 15 | 88% | 1% | 7 |
4 | CHANNEL THERMAL NOISE | Author keyword | 11 | 54% | 1% | 14 |
5 | INDUCED GATE NOISE | Author keyword | 9 | 43% | 2% | 17 |
6 | RF MOSFETS | Author keyword | 9 | 67% | 1% | 8 |
7 | SUBSTRATE RESISTANCE | Author keyword | 8 | 40% | 2% | 16 |
8 | RF MOSFET | Author keyword | 7 | 46% | 1% | 12 |
9 | RF NOISE | Author keyword | 7 | 38% | 2% | 15 |
10 | DE EMBEDDING | Author keyword | 7 | 21% | 3% | 30 |
Web of Science journal categories |
Author Key Words |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
---|---|---|---|---|---|---|---|
1 | NOISE PARAMETERS | 26 | 40% | 5% | 51 | Search NOISE+PARAMETERS | Search NOISE+PARAMETERS |
2 | HIGH FREQUENCY HF NOISE | 15 | 88% | 1% | 7 | Search HIGH+FREQUENCY+HF+NOISE | Search HIGH+FREQUENCY+HF+NOISE |
3 | KINK PHENOMENON | 15 | 88% | 1% | 7 | Search KINK+PHENOMENON | Search KINK+PHENOMENON |
4 | CHANNEL THERMAL NOISE | 11 | 54% | 1% | 14 | Search CHANNEL+THERMAL+NOISE | Search CHANNEL+THERMAL+NOISE |
5 | INDUCED GATE NOISE | 9 | 43% | 2% | 17 | Search INDUCED+GATE+NOISE | Search INDUCED+GATE+NOISE |
6 | RF MOSFETS | 9 | 67% | 1% | 8 | Search RF+MOSFETS | Search RF+MOSFETS |
7 | SUBSTRATE RESISTANCE | 8 | 40% | 2% | 16 | Search SUBSTRATE+RESISTANCE | Search SUBSTRATE+RESISTANCE |
8 | RF MOSFET | 7 | 46% | 1% | 12 | Search RF+MOSFET | Search RF+MOSFET |
9 | RF NOISE | 7 | 38% | 2% | 15 | Search RF+NOISE | Search RF+NOISE |
10 | DE EMBEDDING | 7 | 21% | 3% | 30 | Search DE+EMBEDDING | Search DE+EMBEDDING |
Key Words Plus |
Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | DEEP SUBMICRON MOSFETS | 26 | 50% | 4% | 37 |
2 | SCATTERING PARAMETER S 22 | 20 | 100% | 1% | 9 |
3 | RF MOSFETS | 17 | 72% | 1% | 13 |
4 | DE EMBEDDING METHOD | 15 | 82% | 1% | 9 |
5 | HIGH FREQUENCY NOISE | 14 | 39% | 3% | 28 |
6 | INTERNAL TOPOLOGY | 8 | 100% | 1% | 5 |
7 | DEVICE NOISE | 6 | 58% | 1% | 7 |
8 | SUBSTRATE RESISTANCE | 6 | 58% | 1% | 7 |
9 | PAD PARASITICS | 5 | 60% | 1% | 6 |
10 | RF IC DESIGN | 5 | 34% | 1% | 11 |
Journals |
Reviews |
Title | Publ. year | Cit. | Active references | % act. ref. to same field |
---|---|---|---|---|
Compact noise models for MOSFETs | 2006 | 41 | 68 | 63% |
Wave-based approach for microwave noise characterization | 2008 | 1 | 22 | 95% |
RF MOSFET: recent advances, current status and future trends | 2003 | 21 | 16 | 25% |
On the noise resistance of field-effect transistors at microwave frequencies | 2001 | 0 | 15 | 67% |
Green's functions approach to mos physics-based compact noise modelling | 2001 | 1 | 2 | 50% |
Nanoscale FETs | 2012 | 0 | 109 | 30% |
Address terms |
Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
---|---|---|---|---|---|
1 | UNITA TORINO POLITECN | 3 | 57% | 0.4% | 4 |
2 | FLUCTUAT PHENOMENA | 3 | 60% | 0.3% | 3 |
3 | RF INTEGRATED SYST CIRCUITS GRP | 3 | 60% | 0.3% | 3 |
4 | FG MIKROWELLENTECH | 2 | 67% | 0.2% | 2 |
5 | CMOS DEVICE DESIGN | 1 | 100% | 0.2% | 2 |
6 | IC DESIGN EXCELLENCE | 1 | 29% | 0.4% | 4 |
7 | DICIEAMA | 1 | 27% | 0.4% | 4 |
8 | TSC | 1 | 14% | 0.7% | 7 |
9 | ATD MODELING | 1 | 40% | 0.2% | 2 |
10 | ROBUST POWER SEMICOND SYST | 1 | 40% | 0.2% | 2 |
Related classes at same level (level 1) |
Rank | Relatedness score | Related classes |
---|---|---|
1 | 0.0000200229 | SCATTERING PARAMETER MEASUREMENT//SCATTERING MATRIX MEASUREMENT//MICROWAVE NETWORK ANALYZER |
2 | 0.0000172189 | NONQUASI STATIC NQS EFFECT//QUCS//RSCE |
3 | 0.0000167747 | LARGE SIGNAL MODEL//NONLINEAR MEASUREMENTS//MESFETS |
4 | 0.0000110857 | LOW NOISE AMPLIFIER LNA//LOW NOISE AMPLIFIER//PASSIVE MIXER |
5 | 0.0000099528 | SPIRAL INDUCTOR//MASTERSLICE//INDUCTOR MODEL |
6 | 0.0000088145 | SIMULAT OPTIMIZAT SYST//ENGN OPTIMIZAT MODELING//SPACE MAPPING |
7 | 0.0000081087 | DOUBLE GATE MOSFET//FINFET//SHORT CHANNEL EFFECTS |
8 | 0.0000078544 | DISTRIBUTED AMPLIFIER//DISTRIBUTED AMPLIFIERS//DISTRIBUTED AMPLIFIER DA |
9 | 0.0000071220 | REAL FREQUENCY TECHNIQUES//BROADBAND MATCHING//REAL FREQUENCY TECHNIQUE |
10 | 0.0000062005 | PARTIAL ELEMENT EQUIVALENT CIRCUIT PEEC//ON CHIP CIRCUITS//PARTIAL ELEMENT EQUIVALENT CIRCUIT |