Class information for: |
Basic class information |
| ID | Publications | Average number of references |
Avg. shr. active ref. in WoS |
|---|---|---|---|
| 10650 | 978 | 16.3 | 46% |
Classes in level above (level 2) |
| ID, lev. above |
Publications | Label for level above |
|---|---|---|
| 1376 | 7700 | GALLIUM ARSENIDE//SULFUR PASSIVATION//INDIUM ARSENIDE |
Terms with highest relevance score |
| Rank | Term | Type of term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|---|
| 1 | SEMICOND INTEGRATED CIRCUIT | Address | 1 | 38% | 0% | 3 |
| 2 | SCI TECH FES SAIS | Address | 1 | 50% | 0% | 2 |
| 3 | HIGFET | Author keyword | 1 | 40% | 0% | 2 |
| 4 | MAGNETICALLY EXCITED PLASMA | Author keyword | 1 | 40% | 0% | 2 |
| 5 | THERMAL OXIDES | Author keyword | 1 | 33% | 0% | 2 |
| 6 | AR MIXING | Author keyword | 1 | 50% | 0% | 1 |
| 7 | C V CHARACTERISATION | Author keyword | 1 | 50% | 0% | 1 |
| 8 | DIRECT PHOTO CVD | Author keyword | 1 | 50% | 0% | 1 |
| 9 | DOUBLE LAYERED FILMS | Author keyword | 1 | 50% | 0% | 1 |
| 10 | DRAIN CURRENT DRIFT | Author keyword | 1 | 50% | 0% | 1 |
Web of Science journal categories |
Author Key Words |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
LCSH search | Wikipedia search |
|---|---|---|---|---|---|---|---|
| 1 | HIGFET | 1 | 40% | 0% | 2 | Search HIGFET | Search HIGFET |
| 2 | MAGNETICALLY EXCITED PLASMA | 1 | 40% | 0% | 2 | Search MAGNETICALLY+EXCITED+PLASMA | Search MAGNETICALLY+EXCITED+PLASMA |
| 3 | THERMAL OXIDES | 1 | 33% | 0% | 2 | Search THERMAL+OXIDES | Search THERMAL+OXIDES |
| 4 | AR MIXING | 1 | 50% | 0% | 1 | Search AR+MIXING | Search AR+MIXING |
| 5 | C V CHARACTERISATION | 1 | 50% | 0% | 1 | Search C+V+CHARACTERISATION | Search C+V+CHARACTERISATION |
| 6 | DIRECT PHOTO CVD | 1 | 50% | 0% | 1 | Search DIRECT+PHOTO+CVD | Search DIRECT+PHOTO+CVD |
| 7 | DOUBLE LAYERED FILMS | 1 | 50% | 0% | 1 | Search DOUBLE+LAYERED+FILMS | Search DOUBLE+LAYERED+FILMS |
| 8 | DRAIN CURRENT DRIFT | 1 | 50% | 0% | 1 | Search DRAIN+CURRENT+DRIFT | Search DRAIN+CURRENT+DRIFT |
| 9 | HIGH K DIELECTRIC OXIDES | 1 | 50% | 0% | 1 | Search HIGH+K+DIELECTRIC+OXIDES | Search HIGH+K+DIELECTRIC+OXIDES |
| 10 | DEAD LAYER MODEL | 0 | 33% | 0% | 1 | Search DEAD+LAYER+MODEL | Search DEAD+LAYER+MODEL |
Key Words Plus |
| Rank | Web of Science journal category | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | RELAXATION TIME DISTRIBUTION | 15 | 88% | 1% | 7 |
| 2 | SLOW CURRENT DRIFT | 4 | 75% | 0% | 3 |
| 3 | INP MISFETS | 3 | 100% | 0% | 3 |
| 4 | PHOSPHORUS NITRIDE | 3 | 45% | 1% | 5 |
| 5 | MISFETS | 2 | 22% | 1% | 9 |
| 6 | INP SCHOTTKY CONTACTS | 2 | 67% | 0% | 2 |
| 7 | EQUIVALENT NETWORK | 2 | 43% | 0% | 3 |
| 8 | DEPLETION MODE MISFETS | 1 | 100% | 0% | 2 |
| 9 | GAINAS MICROWAVE MISFETS | 1 | 100% | 0% | 2 |
| 10 | INP MISFET | 1 | 50% | 0% | 2 |
Journals |
Reviews |
| Title | Publ. year | Cit. | Active references |
% act. ref. to same field |
|---|---|---|---|---|
| CHEMISTRY OF PROCESSES OF DIRECTED FORMATION OF FUNCTIONAL DIELECTRIC LAYERS ON SEMICONDUCTORS UNDER THEIR ADMIXED THERMOOXIDATION | 1991 | 10 | 34 | 79% |
| INDIUM ARSENIDE - A SEMICONDUCTOR FOR HIGH-SPEED AND ELECTROOPTICAL DEVICES | 1993 | 43 | 92 | 10% |
| Charge traps in high-k dielectrics: Ab initio study of defects in Pr-based materials | 2007 | 0 | 12 | 17% |
Address terms |
| Rank | Address term | Relevance score (tfidf) |
Class's shr. of term's tot. occurrences |
Shr. of publ. in class containing term |
Num. of publ. in class |
|---|---|---|---|---|---|
| 1 | SEMICOND INTEGRATED CIRCUIT | 1 | 38% | 0.3% | 3 |
| 2 | SCI TECH FES SAIS | 1 | 50% | 0.2% | 2 |
| 3 | LAVOISIER ILV | 1 | 50% | 0.1% | 1 |
| 4 | OPT ELE POB 131 | 1 | 50% | 0.1% | 1 |
| 5 | UMR 8637CNRS | 1 | 50% | 0.1% | 1 |
| 6 | CLOES SUPELEC | 1 | 22% | 0.2% | 2 |
| 7 | LICM | 0 | 11% | 0.4% | 4 |
| 8 | AL HIJJAWI ENGN TECHNOL | 0 | 33% | 0.1% | 1 |
| 9 | ELE ENGN BUNKYO KU | 0 | 33% | 0.1% | 1 |
| 10 | CORROS PROT | 0 | 25% | 0.1% | 1 |
Related classes at same level (level 1) |
| Rank | Relatedness score | Related classes |
|---|---|---|
| 1 | 0.0000281509 | INDIUM PHOSPHIDE100//INTERACTION IONS MATTER//SIMULATION METHOD TRIM |
| 2 | 0.0000226720 | MESA STEP HEIGHT//LAVOISIER IREM//IMAGE ARRAY |
| 3 | 0.0000172958 | SULFUR PASSIVATION//PHOSPHIDIZATION//PHOSPHINE PLASMA |
| 4 | 0.0000154560 | GAAS MOSFET//INTERFACE CONTROL LAYER//III V MOSFET |
| 5 | 0.0000129029 | ATOMIC HYDROGEN CLEANING//ECR HYDROGEN PLASMA//IN SITU VACUUM PROCESS |
| 6 | 0.0000124634 | SILICON TETRAACETATE//F 2 LASER//N2O GAS |
| 7 | 0.0000101928 | EMISSION RATE SPECTRUM//CAPACITANCE TRANSIENTS//DLTS RESOLUTION |
| 8 | 0.0000096321 | FE DOPED INP//PHOSPHORUS VAPOR PRESSURE//WAFER ANNEALING |
| 9 | 0.0000072396 | WEBSTER//ADIABATIC BOND CHARGE MODEL//INAS110 |
| 10 | 0.0000062958 | MEV ION IMPLANTATION//ACTIVATION EFFICIENCY//COLD IMPLANTS |