Class information for:
Level 1: ALGAN GAN//HIGH ELECTRON MOBILITY TRANSISTOR HEMT//CURRENT COLLAPSE

Basic class information
ID Publications Average number
of references		 Avg. shr. active
ref. in WoS
101 4292 19.2 78%


Bar chart of Publication_year

Last years might be incomplete

Classes in level above (level 2)


ID, lev.
above		 Publications Label for level above
33 32935 GAN//NITRIDES//GALLIUM NITRIDE

Terms with highest relevance score


Rank Term Type of term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 ALGAN GAN Author keyword 205 52% 6% 276
2 HIGH ELECTRON MOBILITY TRANSISTOR HEMT Author keyword 131 51% 4% 184
3 CURRENT COLLAPSE Author keyword 127 71% 2% 102
4 ALGAN GAN HIGH ELECTRON MOBILITY TRANSISTOR HEMT Author keyword 65 90% 1% 28
5 HIGH ELECTRON MOBILITY TRANSISTORS HEMTS Author keyword 56 56% 2% 69
6 HEMT Author keyword 53 21% 5% 232
7 ALGAN GAN HIGH ELECTRON MOBILITY TRANSISTORS HEMTS Author keyword 53 95% 0% 18
8 ALGAN GAN HEMT Author keyword 49 48% 2% 75
9 HIGH ELECTRON MOBILITY TRANSISTORS Author keyword 45 31% 3% 122
10 NORMALLY OFF Author keyword 43 51% 1% 60

Web of Science journal categories

Author Key Words


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class		 LCSH search Wikipedia search
1 ALGAN GAN 205 52% 6% 276 Search ALGAN+GAN Search ALGAN+GAN
2 HIGH ELECTRON MOBILITY TRANSISTOR HEMT 131 51% 4% 184 Search HIGH+ELECTRON+MOBILITY+TRANSISTOR+HEMT Search HIGH+ELECTRON+MOBILITY+TRANSISTOR+HEMT
3 CURRENT COLLAPSE 127 71% 2% 102 Search CURRENT+COLLAPSE Search CURRENT+COLLAPSE
4 ALGAN GAN HIGH ELECTRON MOBILITY TRANSISTOR HEMT 65 90% 1% 28 Search ALGAN+GAN+HIGH+ELECTRON+MOBILITY+TRANSISTOR+HEMT Search ALGAN+GAN+HIGH+ELECTRON+MOBILITY+TRANSISTOR+HEMT
5 HIGH ELECTRON MOBILITY TRANSISTORS HEMTS 56 56% 2% 69 Search HIGH+ELECTRON+MOBILITY+TRANSISTORS+HEMTS Search HIGH+ELECTRON+MOBILITY+TRANSISTORS+HEMTS
6 HEMT 53 21% 5% 232 Search HEMT Search HEMT
7 ALGAN GAN HIGH ELECTRON MOBILITY TRANSISTORS HEMTS 53 95% 0% 18 Search ALGAN+GAN+HIGH+ELECTRON+MOBILITY+TRANSISTORS+HEMTS Search ALGAN+GAN+HIGH+ELECTRON+MOBILITY+TRANSISTORS+HEMTS
8 ALGAN GAN HEMT 49 48% 2% 75 Search ALGAN+GAN+HEMT Search ALGAN+GAN+HEMT
9 HIGH ELECTRON MOBILITY TRANSISTORS 45 31% 3% 122 Search HIGH+ELECTRON+MOBILITY+TRANSISTORS Search HIGH+ELECTRON+MOBILITY+TRANSISTORS
10 NORMALLY OFF 43 51% 1% 60 Search NORMALLY+OFF Search NORMALLY+OFF

Key Words Plus


Rank Web of Science journal category Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 HEMTS 372 41% 16% 707
2 ALGAN GAN HEMTS 318 59% 8% 353
3 HFETS 299 65% 7% 286
4 CURRENT COLLAPSE 290 76% 5% 201
5 ELECTRON MOBILITY TRANSISTORS 154 35% 8% 353
6 GANHEMTS 134 65% 3% 129
7 ALGAN GAN HETEROSTRUCTURES 103 44% 4% 176
8 PIEZOELECTRIC POLARIZATION 70 49% 2% 104
9 BREAKDOWN VOLTAGE 46 32% 3% 121
10 SURFACE PASSIVATION 44 23% 4% 167

Journals

Reviews


Title Publ. year Cit. Active references % act. ref.
to same field
Gallium nitride devices for power electronic applications 2013 23 21 71%
Prospects for the application of GaN power devices in hybrid electric vehicle drive systems 2013 15 14 86%
AlGaN devices and growth of device structures 2015 1 178 28%
Electronic surface and dielectric interface states on GaN and AlGaN 2013 19 280 58%
Present status and future prospect of widegap semiconductor high-power devices 2006 92 120 50%
Current status and scope of gallium nitride-based vertical transistors for high-power electronics application 2013 5 10 80%
Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices 2012 21 90 41%
N-polar GaN epitaxy and high electron mobility transistors 2013 8 194 54%
Merits of gallium nitride based power conversion 2013 4 5 80%
Novel insulators for gate dielectrics and surface passivation of GaN-based electronic devices 2004 35 57 93%

Address terms


Rank Address term Relevance score
(tfidf)		 Class's shr.
of term's tot.
occurrences		 Shr. of publ.
in class containing
term		 Num. of
publ. in
class
1 WIDE BAND G SEMICOND MAT DEVICES 26 27% 1.9% 82
2 NANODEVICE SYST 23 39% 1.1% 46
3 MICROELECT DEVICE INTEGRATED TECHNOL 21 78% 0.3% 14
4 IGBT PART 18 89% 0.2% 8
5 CDTR 17 79% 0.3% 11
6 GAN DEVICE TECHNOL 16 52% 0.5% 22
7 PLICAT SPECIF INTEGRATED CIRCUIT A 15 73% 0.3% 11
8 MILLIMETER WAVE ELECT GRP 13 61% 0.3% 14
9 DISCRETE DEV TEAM 12 86% 0.1% 6
10 DEVICE THERMOG RELIABIL 11 57% 0.3% 13

Related classes at same level (level 1)


Rank Relatedness score Related classes
1 0.0000169916 FLUCTUAT//PLANAR GUNN DIODE//ELLIPSOIDAL VALLEYS
2 0.0000153911 P INGAN//GAN SIC HETEROJUNCTION//COMMON EMITTER
3 0.0000143768 P GAN//OHMIC CONTACT//OHMIC CONTACTS
4 0.0000107047 SOCIOTECHNO SCI TECHNOL//N GAN//GALLIUM HYDROXIDE
5 0.0000107005 TORAT PROSTHET DENT SECT//NCSU UNC CH JOINT BIOMED ENGN//IMMUNOFET
6 0.0000096438 OBNINSK BRANCH FED STATE UNITARY ENTERPRISE//YELLOW LUMINESCENCE//MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH
7 0.0000091102 MOBILITY SPECTRUM ANALYSIS//QUANTITATIVE MOBILITY SPECTRUM ANALYSIS QMSA//MOBILITY SPECTRUM
8 0.0000089471 SI111 SUBSTRATES//SI111 SUBSTRATE//ALN BUFFER
9 0.0000086659 GAN SURFACES//INTERDISCIPLINARY MODELLING//INTERDISCIPLINARY MAT MODELLING
10 0.0000075676 AL1 XINXN//ALINN//RESONANT CAVITY LIGHT EMITTING DIODE RCLED